High quality strained Si/SiGe substrates for CMOS and optical devices
In: Proceedings of the ninth european workshop on materials for advanced metallization 2005, 6-9 March 2005, Dresden, GermanyMicroelectronic engineering 82(3-4):215-220
Konferenz
- print, 3 ref
Zugriff:
Using LPCVD epitaxy on 200 mm standard wafers high quality strained Si/SiGe substrates (sSi/SiGe) based on a graded buffer approach have been developed. Physical and chemical analysis of the substrates, show an efficient amount of relaxation of the SiGe buffer and a fully strained silicon cap. Process integration of test devices into the sSi/SiGe layers was performed using a simply modified CMOS process. NMOS and PMOS transistors were integrated together with PIN diodes in a single sSi/SiGe substrate using the same process flow. Electrical measurements showed the enhancement of charge carrier mobility of up to 80% for electrons and 37% for holes compared to epitaxially grown silicon for reference. Also an enhanced photo responsivity at a wavelength of 1310 nm for PIN diodes integrated into the SiGe buffers was demonstrated. Low leakage currents of the PIN diodes conclude good crystal quality of the SiGe buffer layer.
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High quality strained Si/SiGe substrates for CMOS and optical devices
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Autor/in / Beteiligte Person: | WEBER, J ; NEBRICH, L ; BENSCH, F ; NEUMEIER, K ; VOGG, G ; WIELAND, R ; BONFERT, D ; RAMM, P |
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Quelle: | Proceedings of the ninth european workshop on materials for advanced metallization 2005, 6-9 March 2005, Dresden, GermanyMicroelectronic engineering 82(3-4):215-220 |
Veröffentlichung: | Amsterdam: Elsevier Science, 2005 |
Medientyp: | Konferenz |
Umfang: | print, 3 ref |
ISSN: | 0167-9317 (print) |
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