SOI-CMOS compatible low-power gas sensor using sputtered and drop-coated metal-oxide active layers
In: Special issue: Symposium on design, test, integration and packaging of MEMS/MOEMS, Montreux, Switzerland, 12-14 May 2004Microsystem technologies 12(1-2):160-168; Jg. 12 (2005) 1-2, S. 160-168
Online
Konferenz
- print, 16 ref
Zugriff:
In this paper, a Silicon-On-Insulator (SOI) solid-state gas-sensor with an original design of a polysilicon loop-shaped microheater fabricated on a thin-stacked dielectric membrane is presented. The microheater ensures high thermal uniformity and very low power consumption (25 mW for heating at 400°C). Sensitive films are based on tin and tungsten oxides deposited either by RF sputtering or drop coating methods. The fabricated sensors are tested to a wide variety of contaminant species and promising results are obtained. The use of completely CMOS compatible TMAH-based bulk micro-machining techniques during the fabrication process, allows easy smart gas sensor integration in SOI-CMOS technology. This makes SOI-based gas-sensing devices particularly attractive for use in handheld battery-operated gas monitors.
Titel: |
SOI-CMOS compatible low-power gas sensor using sputtered and drop-coated metal-oxide active layers
|
---|---|
Autor/in / Beteiligte Person: | IVANOV, P ; LACONTE, J ; RASKIN, J. P ; STANKOVA, M ; SOTTER, E ; LLOBET, E ; VILANOVA, X ; FLANDRE, D ; CORREIG, X |
Link: | |
Quelle: | Special issue: Symposium on design, test, integration and packaging of MEMS/MOEMS, Montreux, Switzerland, 12-14 May 2004Microsystem technologies 12(1-2):160-168; Jg. 12 (2005) 1-2, S. 160-168 |
Veröffentlichung: | Berlin: Springer, 2005 |
Medientyp: | Konferenz |
Umfang: | print, 16 ref |
ISSN: | 0946-7076 (print) |
Schlagwort: |
|
Sonstiges: |
|