Synchrotron-radiation photoemission and O Kα emission study on (LnO)CuS (Ln = Ce, Pr, Nd)
In: Proceedings of Rare Earths'04 in Nara, Japan, November 7-12, 2004, Nara, JapanJournal of alloys and compounds 408-12:746-749; Jg. 408-12 (2006) S. 746-749
Konferenz
- print, 14 ref
Zugriff:
Ln 4f partial densities of states (DOSs) in layered oxysulfide semiconductors (LnO)CuS (Ln = Ce, Pr, Nd) have been deduced by means of the Ln 4d-4f resonant photoemission spectroscopy. The Ce 4f DOS contributes just below the valence-band maximum (VBM) of (CeO)CuS, and on going from Ln = Ce to Pr, and to Nd, the 4f DOS shifts toward the deeper binding-energy side, leading no 4f contribution near VBM for Ln = Pr and Nd. The 0 2p partial DOSs derived from O Kα emission spectra are almost unchanged with the Ln elements.
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Synchrotron-radiation photoemission and O Kα emission study on (LnO)CuS (Ln = Ce, Pr, Nd)
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Autor/in / Beteiligte Person: | SATO, H ; NISHIMOTO, S ; NAKATAKE, M ; NAMATAME, H ; TANIGUCHI, M ; TSUJI, K ; TAKASE, K ; NAKAO, H ; TAKAHASHI, Y ; TAKANO, T ; SEKIZAWA, K ; NEGISHI, H ; NEGISHI, S |
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Quelle: | Proceedings of Rare Earths'04 in Nara, Japan, November 7-12, 2004, Nara, JapanJournal of alloys and compounds 408-12:746-749; Jg. 408-12 (2006) S. 746-749 |
Veröffentlichung: | Lausanne: Elsevier, 2006 |
Medientyp: | Konferenz |
Umfang: | print, 14 ref |
ISSN: | 0925-8388 (print) |
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