The formation of hetero-junction using carbon alloys by hot-wire CVD method
In: Proceedings of the Third International Conference on Hot-Wire CVD (Cat-CVD) Process, Utrecht, The Netherlands, August 23-27, 2004Thin solid films 501(1-2):164-168; Jg. 501 (2006) 1-2, S. 164-168
Konferenz
- print, 15 ref
Zugriff:
The deposition and fundamental properties of a-Si1-xCx:H thin films made using a butane gas source, and of microcrystalline films including μc-Si:H and μc-3C-SiC:H are reviewed from the viewpoint of hetero-junction formation. The durability of TiO2 thin films upon atomic hydrogen exposure is also reviewed for suppressing the deoxidation of transparent electrodes accompanied by the use of a new microcrystalline silicon carbon alloy for a window layer. The future direction for the development of hetero-junction Si thin film solar cells by hot-wire CVD is discussed.
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The formation of hetero-junction using carbon alloys by hot-wire CVD method
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Autor/in / Beteiligte Person: | NONOMURA, Shuichi ; YOSHIDA, Norimitsu ; ITOH, Takashi |
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Quelle: | Proceedings of the Third International Conference on Hot-Wire CVD (Cat-CVD) Process, Utrecht, The Netherlands, August 23-27, 2004Thin solid films 501(1-2):164-168; Jg. 501 (2006) 1-2, S. 164-168 |
Veröffentlichung: | Lausanne: Elsevier Science, 2006 |
Medientyp: | Konferenz |
Umfang: | print, 15 ref |
ISSN: | 0040-6090 (print) |
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