Effect of H2 dilution on Cat-CVD a-SiC:H films
In: Proceedings of the Third International Conference on Hot-Wire CVD (Cat-CVD) Process, Utrecht, The Netherlands, August 23-27, 2004Thin solid films 501(1-2):173-176; Jg. 501 (2006) 1-2, S. 173-176
Konferenz
- print, 24 ref
Zugriff:
Effect of hydrogen (H2) dilution of the Silane (SiH4), acetylene (C2H2) gas mixture during the deposition of hydrogenated amorphous silicon carbon alloy (a-SiC:H) films by Cat-CVD process shows that the H2dilution induced additional carbon incorporation, leading to an increase of the carbon content in the films from 52% to 70% for the maximum H2 dilution employed. A slight increase in graphitic carbon in the films deposited with H2 dilution is also observed. A drastic increase in the optical band gap Eg from 2.5 eV for zero dilution to 3.5 eV is observed for a H2 dilution of 10 sccm. Raman spectra for the films deposited with increasing H2 dilution indicate structural changes in the amorphous network associated with increasing graphitic carbon.
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Effect of H2 dilution on Cat-CVD a-SiC:H films
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Autor/in / Beteiligte Person: | SWAIN, Bibhu P ; GUNDU RAO, T. K ; ROY, Mainak ; GUPTA, Jagannath ; DUSANE, R. O |
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Quelle: | Proceedings of the Third International Conference on Hot-Wire CVD (Cat-CVD) Process, Utrecht, The Netherlands, August 23-27, 2004Thin solid films 501(1-2):173-176; Jg. 501 (2006) 1-2, S. 173-176 |
Veröffentlichung: | Lausanne: Elsevier Science, 2006 |
Medientyp: | Konferenz |
Umfang: | print, 24 ref |
ISSN: | 0040-6090 (print) |
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