Low-temperature growth of Si-based organic-inorganic hybrid materials, Si-O-C and Si-N-C, by organic Cat-CVD
In: Proceedings of the Third International Conference on Hot-Wire CVD (Cat-CVD) Process, Utrecht, The Netherlands, August 23-27, 2004Thin solid films 501(1-2):190-194; Jg. 501 (2006) 1-2, S. 190-194
Konferenz
- print, 11 ref
Zugriff:
This paper describes the recent development of organic catalytic CVD (O-Cat-CVD), which is an extension of the conventional Cat-CVD technique to organic substances. O-Cat-CVD utilizes various types of metal organic (MO) compounds as Cat-CVD sources. Various functional organic-inorganic hybrid materials can be prepared on the basis of MO molecules. The growth and properties of Si-based organic-inorganic materials, Si-O-C and Si-N-C, are described with emphasis on the microscopic chemical-bonding structures depending on the source molecules. The application to a micro Fresnel lens array and selective oxidation mask of Si-O-C and Si-N-C are also demonstrated.
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Low-temperature growth of Si-based organic-inorganic hybrid materials, Si-O-C and Si-N-C, by organic Cat-CVD
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Autor/in / Beteiligte Person: | NAKAYAMA, Hiroshi ; HATA, Tsuyoshi |
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Quelle: | Proceedings of the Third International Conference on Hot-Wire CVD (Cat-CVD) Process, Utrecht, The Netherlands, August 23-27, 2004Thin solid films 501(1-2):190-194; Jg. 501 (2006) 1-2, S. 190-194 |
Veröffentlichung: | Lausanne: Elsevier Science, 2006 |
Medientyp: | Konferenz |
Umfang: | print, 11 ref |
ISSN: | 0040-6090 (print) |
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