Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD
In: Proceedings of the Third International Conference on Hot-Wire CVD (Cat-CVD) Process, Utrecht, The Netherlands, August 23-27, 2004Thin solid films 501(1-2):247-251; Jg. 501 (2006) 1-2, S. 247-251
Konferenz
- print, 27 ref
Zugriff:
Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM 1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated.
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Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD
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Autor/in / Beteiligte Person: | FONRODONA, M ; SOLER, D ; VILLAR, F ; ESCARRE, J ; ASENSI, J. M ; BERTOMEU, J ; ANDREU, J |
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Quelle: | Proceedings of the Third International Conference on Hot-Wire CVD (Cat-CVD) Process, Utrecht, The Netherlands, August 23-27, 2004Thin solid films 501(1-2):247-251; Jg. 501 (2006) 1-2, S. 247-251 |
Veröffentlichung: | Lausanne: Elsevier Science, 2006 |
Medientyp: | Konferenz |
Umfang: | print, 27 ref |
ISSN: | 0040-6090 (print) |
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