Relation between pin a-Si:H solar-cell performances and intrinsic-layer properties prepared by Cat-CVD

KITAMURA, T ; HONDA, K ; et al.

In: Proceedings of the Third International Conference on Hot-Wire CVD (Cat-CVD) Process, Utrecht, The Netherlands, August 23-27, 2004Thin solid films 501(1-2):264-267; Jg. 501 (2006) 1-2, S. 264-267

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Relationship between performance of pin a-Si:H solar cells and the properties of intrinsic (i) layer prepared by catalytic chemical vapor deposition (Cat-CVD) was studied in detail. Properties of i-layers obtained at the various deposition parameters were investigated, and solar cells were fabricated by using such i-layers. It was found that the optimum temperature to obtain i-layers for high-efficiency solar cells is higher than that of plasma-enhanced chemical vapor deposition (PECVD) solar cells. Although i-layer was prepared at high temperatures, impurity diffusion from p-layer to Cat-CVD i-layer was suppressed. Performance of solar cells using i-layer prepared at the optimum temperature was nearly equivalent to that of conventional PECVD solar cells, while the stability of Cat-CVD cells appears to be more improved than that of PECVD ones.

Titel:	Relation between pin a-Si:H solar-cell performances and intrinsic-layer properties prepared by Cat-CVD
Autor/in / Beteiligte Person:	KITAMURA, T ; HONDA, K ; HARANO, T ; SUGANO, T ; YOSHIDA, N ; MASUDA, A ; ITOH, T ; TOYAMA, T ; NONOMURA, S ; OKAMOTO, H ; MATSUMURA, H ; NISHIMURA, M ; SUGITA, K ; TAKEMOTO, K ; YAMAGUCHI, Y ; TOYAMA, Y ; YAMAMOTO, T ; MIYAZAKI, S ; EGUCHI, M
Link:	E-Journal im Bestand der UB Hagen? View record from PASCAL Archive
Quelle:	Proceedings of the Third International Conference on Hot-Wire CVD (Cat-CVD) Process, Utrecht, The Netherlands, August 23-27, 2004Thin solid films 501(1-2):264-267; Jg. 501 (2006) 1-2, S. 264-267
Veröffentlichung:	Lausanne: Elsevier Science, 2006
Medientyp:	Konferenz
Umfang:	print,
ISSN:	0040-6090 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Electronics Electronique Metallurgy, welding Métallurgie, soudage Condensed state physics Physique de l'état condensé Sciences exactes et technologie Exact sciences and technology Physique Physics Domaines interdisciplinaires: science des materiaux; rheologie Cross-disciplinary physics: materials science; rheology Science des matériaux Materials science Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie Methods of deposition of films and coatings; film growth and epitaxy Dépôt chimique en phase vapeur (incluant le cvd activé par plasma, mocvd, etc.) Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Sciences appliquees Applied sciences Energie Energy Energie naturelle Natural energy Energie solaire Solar energy Conversion photovoltaïque Photovoltaic conversion Cellules solaires. Cellules photoélectrochimiques Solar cells. Photoelectrochemical cells Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.) Photoelectric conversion: solar cells and arrays Composé minéral Inorganic compounds Caractéristique courant tension IV characteristic Cellule solaire Solar cells Couche mince Thin films Couche tampon Buffer layer Capa tampón Diffusion impureté Impurity scattering Dépendance température Temperature dependence Dépôt chimique phase vapeur CVD Etude expérimentale Experimental study Fil chaud Hot wire Hilo caliente Hétérojonction Heterojunctions Jonction p i n p i n junctions Matériau amorphe hydrogéné Amorphous hydrogenated material Méthode PECVD PECVD Méthode phase vapeur Growth from vapor Método fase vapor Performance Préparation Preparation Preparación Semiconducteur Semiconductor materials Silicium Silicon Substrat ZnO/Al a-Si:H Deposition process Intrinsic layer catalytic chemical vapor deposition
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Conference Paper File Description: text Language: English Author Affiliations: Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Ishikawa 923-1292, Japan ; Faculty of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan ; Faculty of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan Rights: Copyright 2006 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Energy ; Physics and materials science

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