Preparation of SiNx gate-insulating films for bottom-gate type TFTs by Cat-CVD method
In: Proceedings of the Third International Conference on Hot-Wire CVD (Cat-CVD) Process, Utrecht, The Netherlands, August 23-27, 2004Thin solid films 501(1-2):307-309; Jg. 501 (2006) 1-2, S. 307-309
Konferenz
- print, 2 ref
Zugriff:
The properties of SiNx films prepared by catalytic chemical vapor deposition (Cat-CVD) on various gate-metals were studied for application of bottom-gate thin-film transistors (BG-TFTs). Additionally, the gate-insulating properties after rapid thermal annealing (RTA) were investigated for the fabrication of polycrystalline silicon (poly-Si) TFTs by simple RTA of amorphous silicon (a-Si:H) BG-TFTs. It was found that Cat-CVD SiNxon metals can be used as gate-insulating films of a-Si:H BG-TFTs and that the films can also be used even after RTA at 800 °C, when the surface of such metals is slightly oxidized.
Titel: |
Preparation of SiNx gate-insulating films for bottom-gate type TFTs by Cat-CVD method
|
---|---|
Autor/in / Beteiligte Person: | SERI, Yasuhiro ; MASUDA, Atsushi ; MATSUMURA, Hideki |
Link: | |
Quelle: | Proceedings of the Third International Conference on Hot-Wire CVD (Cat-CVD) Process, Utrecht, The Netherlands, August 23-27, 2004Thin solid films 501(1-2):307-309; Jg. 501 (2006) 1-2, S. 307-309 |
Veröffentlichung: | Lausanne: Elsevier Science, 2006 |
Medientyp: | Konferenz |
Umfang: | print, 2 ref |
ISSN: | 0040-6090 (print) |
Schlagwort: |
|
Sonstiges: |
|