Growth of high-quality In-rich InGaN alloys by RF-MBE for the fabrication of InN-based quantum well structures

NAOI, Hiroyuki ; KUROUCHI, Masahito ; et al.

In: Proceedings of the Second ONR International Indium Nitride Workshop, 9-13 January 2005, Kailua-Kona, HawaiiJournal of crystal growth 288(2):283-288; Jg. 288 (2006) 2, S. 283-288

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This paper describes studies performed for improving the quality of In-rich InxGa1-xN alloys. The crystalline quality and surface morphology of In-rich InxGa1-xN films was improved by using InN templates as underlying layers. It was also found that the crystalline quality of In-rich InxGa1-xN was strongly correlated with that of the underlying InN templates. High-quality InN templates with the (0002) X-ray rocking curves (XRCs) as narrow as 1 arcmin, have recently been achieved by optimizing the nitridation conditions of (0001) sapphire substrates (300°C, 2h). These InN templates have provided further improvement of the crystalline quality of In0.8Ga0.2N films. The (0002) XRCs for these In0.8Ga0.2N films were approximately 18 arcmin (full-width at half-maximum), dramatically narrower than the 36 arcmin obtained with a previous substrate-nitridation process (550 °C, 1 h). By employing these high-quality In0.8Ga0.2N layers as not only growth templates but also bottom barrier layers, an InN/In0.8Ga0.2N multiple quantum well (MQW) structure and single-quantum well (SQW) structures with different well widths were fabricated. The MQW structure showed clear 1st and 2nd satellite peaks of X-ray diffraction. The SQW structures exhibited photoluminescence emission from their well layers.

Titel:	Growth of high-quality In-rich InGaN alloys by RF-MBE for the fabrication of InN-based quantum well structures
Autor/in / Beteiligte Person:	NAOI, Hiroyuki ; KUROUCHI, Masahito ; MUTO, Daisuke ; ARAKI, Tsutomu ; MIYAJIMA, Takao ; NANISHI, Yasushi
Link:	E-Journal im Bestand der UB Hagen? View record from PASCAL Archive
Quelle:	Proceedings of the Second ONR International Indium Nitride Workshop, 9-13 January 2005, Kailua-Kona, HawaiiJournal of crystal growth 288(2):283-288; Jg. 288 (2006) 2, S. 283-288
Veröffentlichung:	Amsterdam: Elsevier, 2006
Medientyp:	Konferenz
Umfang:	print, 12 ref
ISSN:	0022-0248 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Geology Géologie Metallurgy, welding Métallurgie, soudage Sciences exactes et technologie Exact sciences and technology Physique Physics Etat condense: structure electronique, proprietes electriques, magnetiques et optiques Condensed matter: electronic structure, electrical, magnetic, and optical properties Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Semiconducteurs iii-v Iii-v semiconductors Domaines interdisciplinaires: science des materiaux; rheologie Cross-disciplinary physics: materials science; rheology Science des matériaux Materials science Nanomatériaux et nanostructures : fabrication et caractèrisation Nanoscale materials and structures: fabrication and characterization Puits quantiques Quantum wells III-V semiconductors Composé minéral Inorganic compounds Composé ternaire Ternary compounds Couche barrière Barrier layer Couche mince Thin films Croissance cristalline en phase vapeur Crystal growth from vapors Diffraction RX XRD Epitaxie jet moléculaire Molecular beam epitaxy Etude expérimentale Experimental study Gallium nitrure Gallium nitrides Indium nitrure Indium nitrides Microscopie électronique balayage Scanning electron microscopy Morphologie Morphology Nanomatériau Nanostructured materials Nitruration Nitridation Orientation cristalline Crystal orientation Puits quantique multiple Multiple quantum well Pozo cuántico múltiple Radiofréquence Radiofrequency Radiofrecuencia Réaction dirigée Template reaction Reacción dirigida Ga In N InxGa1-xN Substrat Al2O3 61.10.Nz 78.55.Cr 78.66.Fd 81.05.Ea 81.15.Hi Al. Photoluminescence A3. RF-MBE Al. Quantum well Al. X-ray diffraction B2. In-rich InxGa1-xN B2. InN
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Conference Paper File Description: text Language: English Author Affiliations: Center for Promotion of the COE Program, Ritsumeikan University, 1-1-1 Noji-higashi, Kusatsu, Shiga 525-8577, Japan ; Department of Photonics, Ritsumeikan University, 1-1-1 Noji-higashi, Kusatsu, Shiga 525-8577, Japan ; Optoelectronics Laboratory, Materials Laboratories, Sony Corporation, 4-14-1 Asahi, Atsugi, Kanagawa 243-0014, Japan Rights: Copyright 2006 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Physics and materials science ; Physics of condensed state: electronic structure, electrical, magnetic and optical properties

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