Curie temperatures of dilute magnetic semiconductors from LDA + U electronic structure calculations
In: Proceedings of the 23rd international conference on defects in semiconductors, ICDS-23, Awaji Island, Japan, 27-29 July 2005Physica. B, Condensed matter 376-77:639-642; Jg. 376-77 (2006) S. 639-642
Konferenz
- print, 13 ref
Zugriff:
The magnetic properties of dilute magnetic semiconductors (DMS) are calculated by using the local density approximation + U(LDA + U) method. In the LDA + U, occupied d-states in (Ga, Mn)As are predicted at lower energy than in the LDA and p-d exchange interaction explains calculated concentration dependence of Curie temperature very well. In (Ga, Mn)N, unoccupied d states are predicted at higher energy by LDA + U, resulting in higher Curie temperatures than in LDA at high concentrations due to the suppression of the anti-ferromagnetic super-exchange interaction.
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Curie temperatures of dilute magnetic semiconductors from LDA + U electronic structure calculations
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Autor/in / Beteiligte Person: | SATO, K ; DEDERICHS, P. H ; KATAYAMA-YOSHIDA, H |
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Quelle: | Proceedings of the 23rd international conference on defects in semiconductors, ICDS-23, Awaji Island, Japan, 27-29 July 2005Physica. B, Condensed matter 376-77:639-642; Jg. 376-77 (2006) S. 639-642 |
Veröffentlichung: | Amsterdam: Elsevier, 2006 |
Medientyp: | Konferenz |
Umfang: | print, 13 ref |
ISSN: | 0921-4526 (print) |
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