A 0.13 μm CMOS front-end, for DCS1800/UMTS/ 802.11b-g with multiband positive feedback low-noise amplifier
In: 2005 Symposium on VLSI CircuitsIEEE journal of solid-state circuits 41(4):981-989; Jg. 41 (2006) 4, S. 981-989
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Zugriff:
This paper presents a fully integrated CMOS receiver front-end based on a direct conversion architecture for UMTS/802. 11b-g and a low-IF architecture at 100 kHz for DCS1800. The two key building blocks are a multiband low-noise amplifier (LNA) that uses positive feedback to improve its gain and a highly linear mixer. The front-end, integrated in a 0.13 μm CMOS process, exhibits a minimum noise figure of 5.2 dB, a programmable gain that can be varied from 13.5 to 28.5 dB, an IIP3 of more than -7.5 dBm and an IIP2 better than 50 dBm. The total current consumption is 20 mA from a 1.2 V supply.
Titel: |
A 0.13 μm CMOS front-end, for DCS1800/UMTS/ 802.11b-g with multiband positive feedback low-noise amplifier
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Autor/in / Beteiligte Person: | LISCIDINI, Antonio ; BRANDOLINI, Massimo ; SANZOGNI, Davide ; CASTELLO, Rinaldo |
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Quelle: | 2005 Symposium on VLSI CircuitsIEEE journal of solid-state circuits 41(4):981-989; Jg. 41 (2006) 4, S. 981-989 |
Veröffentlichung: | New York, NY: Institute of Electrical and Electronics Engineers, 2006 |
Medientyp: | Konferenz |
Umfang: | print, 13 ref |
ISSN: | 0018-9200 (print) |
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