Self-consistent coupled carrier transport full-wave EM analysis of semiconductor traveling-wave devices
In: IEEE transactions on microwave theory and techniques, Jg. 54 (2006), Heft 4, S. 1611-1618
Online
academicJournal
- print, 27 ref 1
Zugriff:
We propose a rigorous finite-element-method (FEM) model for traveling-wave structures on doped semiconductor substrates based on a full-wave electromagnetic model coupled to a drift-diffusion description of carrier transport. The coupled model allows to describe field-carrier interactions in distributed structures, where strong low-frequency dispersion due to metal and semiconductor losses and multimodal behavior are observed. Slow-wave propagation, which is significant for photonic devices wherein synchronous optical-RF coupling is required, is also self-consistently accounted for. Numerical examples for some practical microwave structures exploited in RF and optoelectronic applications are included to illustrate the capabilities and effectiveness of the proposed numerical technique.
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Self-consistent coupled carrier transport full-wave EM analysis of semiconductor traveling-wave devices
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Autor/in / Beteiligte Person: | BERTAZZI, Francesco ; CAPPELLUTI, Federica ; GUERRIERI, Simona Donati ; BONANI, Fabrizio ; GHIONE, Giovanni |
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Zeitschrift: | IEEE transactions on microwave theory and techniques, Jg. 54 (2006), Heft 4, S. 1611-1618 |
Veröffentlichung: | New York, NY: Institute of Electrical and Electronics Engineers, 2006 |
Medientyp: | academicJournal |
Umfang: | print, 27 ref 1 |
ISSN: | 0018-9480 (print) |
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