Low-power 5 GHz LNA and VCO in 90 nm RF CMOS
In: 2004 Symposium on VLSI Circuits (digest of technical papers); (2003) S. 372-375
Konferenz
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Zugriff:
The potential of 90 nm CMOS technology for low-power RF front-ends is demonstrated with fully integrated low-voltage Low-Noise Amplifiers (LNA) and Voltage-Controlled Oscillators (VCO). The 5.5 GHz LNA draws 3.5 mA from a 0.6 V supply with a measured power gain of 11.2 dB, and a 3.2 dB noise figure. The 6.3 GHz VCO has a phase noise of -118 dBc/Hz at 1 MHz offset, drawing 4.9 mA from a 1.2 V supply.
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Low-power 5 GHz LNA and VCO in 90 nm RF CMOS
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Autor/in / Beteiligte Person: | LINTEN, D ; ASPEMYR, L ; DONNAY, S ; DECOUTERE, S ; JEAMSAKSIRI, W ; RAMOS, J ; MERCHA, A ; JENEI, S ; THIJS, S ; GARCIA, R ; JACOBSSON, H ; WAMBACQ, P |
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Quelle: | 2004 Symposium on VLSI Circuits (digest of technical papers); (2003) S. 372-375 |
Veröffentlichung: | Tokyo; Piscataway NJ: Business Center for Academic Societies, IEEE, 2003 |
Medientyp: | Konferenz |
Umfang: | print, 21 ref 1 |
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