High rate homoepitaxial growth of diamond by microwave plasma CVD with nitrogen addition

MOKUNO, Y ; CHAYAHARA, A ; et al.

In: Proceedings of diamond 2005, the 16th european conference on diamond, diamond-like materials, carbon nanotubes, nitrides & silicon carbideDiamond and related materials 15(4-8):455-459; Jg. 15 (2006) 4-8, S. 455-459

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Recent progress on high rate homoepitaxial growth of diamond by microwave plasma CVD with nitrogen addition is presented. Effects of process parameters, such as the holder diameter and the reactor pressure, on the growth rate is summarized. Nitrogen incorporation in the high rate grown films measured by secondary ion mass spectrometry (SIMS) was 3.9-39 ppm, which is comparable to that of HPHT Ib diamond. As a possible way to grow large diamond, thick diamond growth by the repetition of high rate growth and three-dimensional enlargement in crystal size by the growth on the side {100} surface is introduced. The repetition of high rate growth has been successfully applied to the growth of thick diamond as large as 10 mm. The crystallinity of a 2.1 mm thick diamond characterized by rocking curve of high resolution X-ray diffraction was 10 arcsec, which is also comparable to that of HPHT Ib diamond.

Titel:	High rate homoepitaxial growth of diamond by microwave plasma CVD with nitrogen addition
Autor/in / Beteiligte Person:	MOKUNO, Y ; CHAYAHARA, A ; SODA, Y ; YAMADA, H ; HORINO, Y ; FUJIMORI, N
Link:	E-Journal im Bestand der UB Hagen? View record from PASCAL Archive
Quelle:	Proceedings of diamond 2005, the 16th european conference on diamond, diamond-like materials, carbon nanotubes, nitrides & silicon carbideDiamond and related materials 15(4-8):455-459; Jg. 15 (2006) 4-8, S. 455-459
Veröffentlichung:	Amsterdam: Elsevier, 2006
Medientyp:	Konferenz
Umfang:	print, 10 ref
ISSN:	0925-9635 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Sciences exactes et technologie Exact sciences and technology Physique Physics Domaines interdisciplinaires: science des materiaux; rheologie Cross-disciplinary physics: materials science; rheology Science des matériaux Materials science Matériaux particuliers Specific materials Fullerènes et matériaux apparentés; diamants, graphite Fullerenes and related materials; diamonds, graphite Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie Methods of deposition of films and coatings; film growth and epitaxy Dépôt chimique en phase vapeur (incluant le cvd activé par plasma, mocvd, etc.) Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Addition azote Nitrogen additions Couche mince Thin films Diamant polycristallin Polycrystalline diamond Diamante policristal Diamant synthétique Synthetic diamond Diamante sintético Décharge hyperfréquence Microwave discharge Descarga hiperfrecuencia Etude expérimentale Experimental study Haute pression High pressure Homoépitaxie Homoepitaxy Homoepitaxia Mécanisme croissance Growth mechanism Mecanismo crecimiento Méthode PECVD PECVD Spectre SIMS Secondary ion mass spectra Spectrométrie SIMS Secondary ion mass spectrometry Espectrometría SIMS Taux croissance Growth rate 8105U 8115G High rate growth Homoepitaxial growth Microwave plasma CVD
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Conference Paper File Description: text Language: English Author Affiliations: Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan Rights: Copyright 2007 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Physics and materials science

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