The role of (sub)-surface oxygen on the surface electronic structure of hydrogen terminated (100) CVD diamond

DEFERME, W ; TANASA, G ; et al.

In: Proceedings of diamond 2005, the 16th european conference on diamond, diamond-like materials, carbon nanotubes, nitrides & silicon carbideDiamond and related materials 15(4-8):687-691; Jg. 15 (2006) 4-8, S. 687-691

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In this work, scanning tunnelling microscopy (STM) and scanning tunnelling spectroscopy (STS) were applied to investigate the surface morphology and the surface electronic structure of plasma-treated (100)-oriented CVD diamond films. These films were hydrogenated using a conventional MWPE-CVD (microwave plasma enhanced chemical vapour deposition) reactor containing a H2 or a H2/O2 mixture. A comparison is made between (100)-oriented CVD diamond films hydrogenated with and without a small addition of oxygen (1%). X-ray Photoelectron Spectroscopy (XPS) and UV Photoelectron Spectroscopy (UPS) measurements point to the presence of O-atoms at the (sub)-surface of the diamond film. The measured conductivity is significantly different for the two processes of hydrogenation. Annealing experiments point out that the samples, which were terminated using the H2/O2 mixture are still conductive enough after annealing at 410 °C to enable STM experiments. Here, we discuss the mechanism for STM imaging of H2/O2 treated diamond films, associated with surface states induced by the oxygen incorporation.

Titel:	The role of (sub)-surface oxygen on the surface electronic structure of hydrogen terminated (100) CVD diamond
Autor/in / Beteiligte Person:	DEFERME, W ; TANASA, G ; AMIR, J ; HAENEN, K ; NESLADEK, M ; FLIPSE, C. F. J
Link:	E-Journal im Bestand der UB Hagen? View record from PASCAL Archive
Quelle:	Proceedings of diamond 2005, the 16th european conference on diamond, diamond-like materials, carbon nanotubes, nitrides & silicon carbideDiamond and related materials 15(4-8):687-691; Jg. 15 (2006) 4-8, S. 687-691
Veröffentlichung:	Amsterdam: Elsevier, 2006
Medientyp:	Konferenz
Umfang:	print, 18 ref
ISSN:	0925-9635 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Sciences exactes et technologie Exact sciences and technology Physique Physics Etat condense: structure, proprietes mecaniques et thermiques Condensed matter: structure, mechanical and thermal properties Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques) Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Structure et morphologie de couches minces Thin film structure and morphology Structure et morphologie; épaisseur Structure and morphology; thickness Etat condense: structure electronique, proprietes electriques, magnetiques et optiques Condensed matter: electronic structure, electrical, magnetic, and optical properties Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Etats électroniques de surface et d'interface Surface and interface electron states Etats de surface, structure de bande, densité d'états électroniques Surface states, band structure, electron density of states Domaines interdisciplinaires: science des materiaux; rheologie Cross-disciplinary physics: materials science; rheology Science des matériaux Materials science Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie Methods of deposition of films and coatings; film growth and epitaxy Dépôt chimique en phase vapeur (incluant le cvd activé par plasma, mocvd, etc.) Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Conductivité superficielle Surface conductivity Croissance cristalline en phase vapeur Crystal growth from vapors Diamant synthétique Synthetic diamond Diamante sintético Décharge hyperfréquence Microwave discharge Descarga hiperfrecuencia Dépôt chimique phase vapeur CVD Microscopie tunnel balayage Scanning tunneling microscopy Monocristal Monocrystals Morphologie surface Surface morphology Méthode PECVD PECVD Structure surface Surface structure Structure électronique Electronic structure Traitement par plasma Plasma assisted processing 6855J 7320A Diamond properties and applications Oxygen plasma treatment Scanning tunnelling spectroscopy
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Conference Paper File Description: text Language: English Author Affiliations: Hasselt University, Institute for Materials Research (IMO), Wetenschapspark 1, 3590 Diepenbeek, Belgium ; Eindhoven University of Technology, Physics Department, Den Dolech 2, 5612 AZ Eindhoven, Netherlands ; IMEC vzw, Division IMOMEC, Wetenschapspark 1, 3590 Diepenbeek, Belgium ; CEA/Saclay, LIST (CEA-Recherche Technologique)/DETECS/SSTM/LTD, Bât 451, 91191 Gif-sur-Yvette, France Rights: Copyright 2007 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Physics and materials science ; Physics of condensed state: electronic structure, electrical, magnetic and optical properties ; Physics of condensed state: structure, mechanical and thermal properties

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