High-gain differential CMOS transimpedance amplifier with on-chip buried double junction photodiode
In: Electronics Letters, Jg. 42 (2006), Heft 14, S. 803-805
Online
academicJournal
- print, 6 ref
Zugriff:
An integrated fully differential CMOS transimpedance amplifier (TIA) with buried double junction photodiode input is described. The TIA features a variable high transimpedance gain (250 kΩ to 2.5 MΩ), large DC photocurrent rejection capability (>55 dB) and low input referred noise density at 100 kHz (2pA/√Hz).
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High-gain differential CMOS transimpedance amplifier with on-chip buried double junction photodiode
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Autor/in / Beteiligte Person: | XU, W ; MATHINE, D. L ; BARTON, J. K |
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Zeitschrift: | Electronics Letters, Jg. 42 (2006), Heft 14, S. 803-805 |
Veröffentlichung: | London: Institution of Electrical Engineers, 2006 |
Medientyp: | academicJournal |
Umfang: | print, 6 ref |
ISSN: | 0013-5194 (print) |
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