Simulation and design of Si double-photodetector for monolithic OEIC in standard CMOS technology

JIANTAO, BIAN ; CHAO, CHEN ; et al.

In: Optoelectronic materials and devices for optical communications (7-10 November 2005, Shanghai, China)Proceedings of SPIE, the International Society for Optical Engineering :602031.1-602031.10

Konferenz - print, 13 ref 1

Wie komme ich dran?

Silicon photodetector can be integrated with all kinds of Silicon circuits to get monolithic OEIC. A CMOS-process-compatible silicon double-photodetector with structures of P+/N-well and N-well/P-substrate, called PD1 and PD2 respectively, is designed in this paper. The theoretical absolute spectral response and response speed of this double-photodetector are calculated and analyzed. Simulation results in 0.5 um standard CMOS process show that the responsivity of the double-photodetector is above 0.2A/W from 400 to 900nm wavelength range without ARC (Anti-Reflection-Coating). Both the effects of the insulated medium layers (SiO2 and Si3N4) in CMOS process and reverse voltage on spectral responsivity are also discussed. When the optical window area is 16.54x16.54 μm2, the capacitance of PD1 is about 100fF at a reverse voltage of 2.5V. Yet the capacitance of PD2 is almost 1/10 of PD1. With a load-resistor of 50Ω, the response speeds of PD1, PD2 and double-photodetector are 0.628, 2.04 and 2.05ns at 650nm wavelength (corresponding bandwidth about 276MHz, 85MHz and 84.7MHz), respectively. Finally, the co-design of Monolithic OEIC is also discussed. A full CMOS monolithic OEIC for optical-disc signal pickup is designed with this double-detector.

Titel:	Simulation and design of Si double-photodetector for monolithic OEIC in standard CMOS technology
Autor/in / Beteiligte Person:	JIANTAO, BIAN ; CHAO, CHEN ; SHENG, XIE
Link:	View record from PASCAL Archive
Quelle:	Optoelectronic materials and devices for optical communications (7-10 November 2005, Shanghai, China)Proceedings of SPIE, the International Society for Optical Engineering :602031.1-602031.10
Veröffentlichung:	Bellingham (Wash.): SPIE, 2005
Medientyp:	Konferenz
Umfang:	print, 13 ref 1
ISSN:	0277-786X (print)
Schlagwort:	Electronics Electronique Optics Optique Physics Physique Telecommunications Télécommunications Sciences exactes et technologie Exact sciences and technology Sciences appliquees Applied sciences Appareillage électronique et fabrication. Composants passifs, circuits imprimés, connectique Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Circuits intégrés Integrated circuits Conception. Technologies. Analyse fonctionnement. Essais Design. Technologies. Operation analysis. Testing Dispositifs optoélectroniques Optoelectronic devices Circuits électriques, optiques et optoélectroniques Electric, optical and optoelectronic circuits Propriétés des circuits Circuit properties Circuits optiques et optoélectroniques Optical and optoelectronic circuits Optoélectronique intégrée. Circuits optoélectroniques Integrated optoelectronics. Optoelectronic circuits Capacité électrique Capacitance Capacitancia Capteur mesure Measurement sensor Captador medida Circuit intégré monolithique Monolithic integrated circuit Circuito integrado monolítico Conception conjointe Codesign Diseño conjunto Dispositif optoélectronique Optoelectronic device Dispositivo optoelectrónico Disque optique Optical disk Disco óptico Fenêtre optique Optical window Ventana óptica Fonction réponse Response function Función respuesta Milieu stratifié Stratified medium Medio estratificado Mémoire optique Optical memory Memoria óptica Optoélectronique intégrée Integrated optoelectronics Optoelectrónica integrada Photodétecteur Photodetector Fotodetector Revêtement antiréfléchissant Antireflection coating Revestimiento antirreflexión Réponse spectrale Spectral response Résistance électrique Resistor Resistencia eléctrica(componente) Signal optique Optical signal Señal óptica Simulation Simulación Technologie MOS complémentaire Complementary MOS technology Tecnología MOS complementario Traitement signal Signal processing Procesamiento señal Tête lecture Read head Cabeza lectura 0707D 8560G
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Conference Paper File Description: text Language: English Author Affiliations: Department of Physics, Xiamen Univ./City, Fujian, 361005, China Rights: Copyright 2006 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Electronics

Klicken Sie ein Format an und speichern Sie dann die Daten oder geben Sie eine Empfänger-Adresse ein und lassen Sie sich per Email zusenden.

BibTeX Citavi, JabRef, u.a.
(Literaturverwaltung)

PDF kein Volltext!
(Merkzettel, Notizen)

RIS Endnote, Citavi u.a.
(Literaturverwaltung)

MODS
(XML zur Weiterverarbeitung)

oder

Wählen Sie das für Sie passende Zitationsformat und kopieren Sie es dann in die Zwischenablage, lassen es sich per Mail zusenden oder speichern es als PDF-Datei.

Gewünschter Zitations-Stil:

oder

Bitte prüfen Sie, ob die Zitation formal korrekt ist, bevor Sie sie in einer Arbeit verwenden. Benutzen Sie gegebenenfalls den "Exportieren"-Dialog, wenn Sie ein Literaturverwaltungsprogramm verwenden und die Zitat-Angaben selbst formatieren wollen.