Piezoelectric and fatigue properties of Pb(Zr0.53Ti0.47)O3 thin films on LaNiO3 thin film electrode
In: Proceedings of the Eleventh International Meeting on Ferroelectricity (IMF-11), Iguassu Falls, Brazil, September 5-9, 2005. Part III of VIIFerroelectrics (Print) 335:51-59; Jg. 335 (2006) S. 51-59
Konferenz
- print, 18 ref
Zugriff:
This paper describes the electrical properties of the CSD-derived ferroelectric PZT thin films on the oxide electrode of LaNiO3 (LNO), which can improve the electrical fatigue for the PZT thin film. We successfully control the orientation of the resulting LNO thin film electrode by the molecular design of the precursor solution to control the orientation of the PZT thin film with a MPB composition on the LNO. As a result, PZT/LNO thin film capacitors exhibited superior electrical properties with no fatigue, not only for remanent polarization but also for piezoelectric and dielectric properties.
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Piezoelectric and fatigue properties of Pb(Zr0.53Ti0.47)O3 thin films on LaNiO3 thin film electrode
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Autor/in / Beteiligte Person: | MIYAZAKI, Hidetoshi ; SUZUKI, Hisao ; NAOE, Tadanari ; SUYAMA, Yoko ; OTA, Toshitaka ; FUJI, Masayoshi ; TAKAHASHI, Minoru |
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Quelle: | Proceedings of the Eleventh International Meeting on Ferroelectricity (IMF-11), Iguassu Falls, Brazil, September 5-9, 2005. Part III of VIIFerroelectrics (Print) 335:51-59; Jg. 335 (2006) S. 51-59 |
Veröffentlichung: | London: Taylor and Francis, 2006 |
Medientyp: | Konferenz |
Umfang: | print, 18 ref |
ISSN: | 0015-0193 (print) |
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