Application of integrated scatterometry measurements for a wafer-level litho feed-back loop in a high-volume 300mm DRAM production environment

KRAMER, Uwe ; FLEISCHER, Goeran ; et al.

In: Data analysis and modeling for process control III (23 February 2006, San Jose, California, USA)Proceedings of SPIE, the International Society for Optical Engineering :615509.1-615509.9

Konferenz - print, 9 ref 1

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With critical dimensions in microelectronics devices shrinking to 70nm and below, CD metrology is becoming more and more critical, and additional measurement information will be needed, especially for sidewall profiles and profile height. Integrated scatterometry is, on the one hand, giving the needed measurement precision, and on the other hand, it enables more measurements than stand-alone metrology. Both high precision and large sampling are needed for future technology nodes. This paper shows results from several full volume DRAM applications of state-of-the-art technology nodes on 300 mm wafers. These applications include critical line/space (L/S) layers as 2D applications and contact-hole (CH) layers consisting of elliptical CH-like structures as critical 3D applications. The selected applications are significantly more challenging with respect to scatterometry model generation than the applications presented in previous papers [1, 2]. Simultaneously, they belong to the most critical lithography steps in DRAM manufacturing. In the experiments, the influences of both pre-processes and the litho cluster on Critical Dimension Uniformity (CDU) have been investigated. Possible impacts on Run-to-Run systems like Feed-back and Feed-forward loops will also be discussed. We show that using integrated scatterometry can significantly increase the productivity of lithography clusters.

Titel:	Application of integrated scatterometry measurements for a wafer-level litho feed-back loop in a high-volume 300mm DRAM production environment
Autor/in / Beteiligte Person:	KRAMER, Uwe ; FLEISCHER, Goeran ; MARSCHNER, Thomas ; HOMIG, Steffen ; WEICHERT, Heiko ; HETZE, Dave
Link:	View record from PASCAL Archive
Quelle:	Data analysis and modeling for process control III (23 February 2006, San Jose, California, USA)Proceedings of SPIE, the International Society for Optical Engineering :615509.1-615509.9
Veröffentlichung:	Bellingham, (Wash.): SPIE, 2006
Medientyp:	Konferenz
Umfang:	print, 9 ref 1
ISSN:	0277-786X (print)
Schlagwort:	Control theory, operational research Automatique, recherche opérationnelle Electronics Electronique Optics Optique Physics Physique Sciences exactes et technologie Exact sciences and technology Sciences appliquees Applied sciences Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Circuits intégrés Integrated circuits Conception. Technologies. Analyse fonctionnement. Essais Design. Technologies. Operation analysis. Testing Circuits intégrés par fonction (dont mémoires et processeurs) Integrated circuits by function (including memories and processors) Fabrication microélectronique (technologie des matériaux et des surfaces) Microelectronic fabrication (materials and surfaces technology) Telecommunications et theorie de l'information Telecommunications and information theory Théorie de l'information, du signal et des communications Information, signal and communications theory Théorie du signal et des communications Signal and communications theory Echantillonnage, quantification Sampling, quantization Boucle anticipation Feedforward Ciclo anticipación Circuit intégré Integrated circuit Circuito integrado Composant électronique Electronic component Componente electrónico Echantillonnage Sampling Muestreo Etat actuel State of the art Estado actual Fabrication microélectronique Microelectronic fabrication Fabricación microeléctrica Lithographie Lithography Litografía Mesure information Information measure Medida información Mémoire accès direct dynamique Dynamic random access memory Mémoire accès direct Random access memory Memoria acceso directo Méthode mesure Measurement method Método medida Pastille électronique Wafer Pastilla electrónica Productivité Productivity Productividad Précision élevée High precision Precisión elevada Système autonome Autonomous system Sistema autónomo Système mesure Measuring system Sistema medida Taille critique Critical size Trou interconnexion Via hole Agujero interconexión
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Conference Paper File Description: text Language: English Author Affiliations: Infineon Technologies SC300 GmbH & Co. OHG, Koenigsbruecker Str. 180, 01099 Dresden, Germany ; Tokyo Electron Deutschland GmbH, Moritzburger Weg 67, 01190 Dresden, Germany ; Timbre Technologies, Inc., 2953 Bunker Hill Lane, Ste. 301, Santa Clara, CA 95054, United States Rights: Copyright 2006 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Electronics ; Telecommunications and information theory

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