DC-20 GHz CMOS LNA using novel multilayered transmission lines and inductors
In: Electronics Letters, Jg. 42 (2006), Heft 22, S. 1273-1275
Online
academicJournal
- print, 8 ref
Zugriff:
A distributed low-noise amplifier (LNA) employing novel multilayered transmission lines and inductors is designed in a standard 0.18 μm CMOS process. The new LNA provides significant improvement in performance and size with less than 13 dB return loss from DC to 17 GHz, average gain of 8 ± 0.2 dB from DC to 20 GHz, noise figure of 3.4-5 dB from 0.5-19 GHz, power consumption of 34.2 mW, and 1.05 x 0.37 mm2 chip size including RF pads.
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DC-20 GHz CMOS LNA using novel multilayered transmission lines and inductors
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Autor/in / Beteiligte Person: | CHIRALA, M. K ; GUAN, X ; NGUYEN, C |
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Zeitschrift: | Electronics Letters, Jg. 42 (2006), Heft 22, S. 1273-1275 |
Veröffentlichung: | London: Institution of Electrical Engineers, 2006 |
Medientyp: | academicJournal |
Umfang: | print, 8 ref |
ISSN: | 0013-5194 (print) |
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