A maskless wet etching silicon dioxide post-CMOS process and its application
In: Microelectronic engineering, Jg. 83 (2006), Heft 11-12, S. 2543-2550
academicJournal
- print, 27 ref
Zugriff:
The complementary metal oxide semiconductor (CMOS) surface micromachining post-process for fabricating suspended microstructures has been investigated. The post-process requires only one wet etching to remove sacrificial layers, which uses a silox vapox III etchant to etch the silicon dioxide layers and to release the suspended structures. The advantages of the post-process are easy execution and low-cost maskless wet etching. Many microstructures, which contain cantilever beams, comb structures and microrotors, are fabricated using the CMOS surface micromachining post-process. Using the same process, two devices such as a radio frequency (RF) switch and a micro-xy stage are successfully developed. Experimental results reveal that the RF switch has an insertion loss of -1.7 dB at 40 GHz and an isolation of -11 dB at 40 GHz. The driving voltage of the RF switch is 19 V.
Titel: |
A maskless wet etching silicon dioxide post-CMOS process and its application
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Autor/in / Beteiligte Person: | DAI, Ching-Liang |
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Zeitschrift: | Microelectronic engineering, Jg. 83 (2006), Heft 11-12, S. 2543-2550 |
Veröffentlichung: | Amsterdam: Elsevier Science, 2006 |
Medientyp: | academicJournal |
Umfang: | print, 27 ref |
ISSN: | 0167-9317 (print) |
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