Etching characteristics and modeling for oval-shaped contact
In: Proceedings of the International Symposium on Dry Process (DPS 2005), Jeju, Korea, November 28-30, 2005Thin solid films 515(12):4923-4927; Jg. 515 (2007) 12, S. 4923-4927
Konferenz
- print, 5 ref
Zugriff:
In this study, etching characteristics of oval-shaped contact were investigated. The oval-shaped contact showed different etching characteristics compared to the circular contact. The long axis cross-section of oval-shaped contact showed a more vertical profile and a less bowing compared to the short axis. To explain these phenomena, we simulated ion reflection from sloped oval-shaped hard-mask. From the simulation, we found that the ions reflected from hard-mask accumulated more toward short axis sidewall first. This ion accumulation and asymmetric charging explained the reason behind larger bowing and slopped profile phenomena of short axis.
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Etching characteristics and modeling for oval-shaped contact
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Autor/in / Beteiligte Person: | PARK, Sung-Chan ; LIM, Seok-Hyun ; SHIN, Chul-Ho ; MIN, Gyung-Jin ; KANG, Chang-Jin ; CHO, Han-Ku ; MOON, Joo-Tae |
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Quelle: | Proceedings of the International Symposium on Dry Process (DPS 2005), Jeju, Korea, November 28-30, 2005Thin solid films 515(12):4923-4927; Jg. 515 (2007) 12, S. 4923-4927 |
Veröffentlichung: | Lausanne: Elsevier Science, 2007 |
Medientyp: | Konferenz |
Umfang: | print, 5 ref |
ISSN: | 0040-6090 (print) |
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