A high-speed, high-sensitivity digital CMOS image sensor with a global shutter and 12-bit column-parallel cyclic A/D converters

FURUTA, Masanori ; NISHIKAWA, Yukinari ; et al.

In: 2006 Symposium on VLSI circuitsIEEE journal of solid-state circuits 42(4):766-774; Jg. 42 (2007) 4, S. 766-774

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This paper presents a high-speed, high-sensitivity 512x512 CMOS image sensor with column parallel cyclic 12-bit ADCs and a global electronic shutter. Each pixel has a charge amplifier for high charge-to-voltage conversion gain despite of using a large-size photodiode, and two sample-and-hold stages for the global shutter and fixed pattern noise (FPN) canceling. High-speed column-parallel cyclic ADC arrays with 12-bit resolution having a small layout size of 0.09 mm2 are integrated at both sides of image array. A technique for accelerating the conversion speed using variable clocking and sampling capacitance is developed. A digital gain control function using 14-bit temporal digital code is also set in the column parallel ADC. The fabricated chip in 0.25-μm CMOS image sensor technology achieves the full frame rate in excess of 3500 frames/s. The in-pixel charge amplifier achieves the optical sensitivity of 19.9 V/lx ·s. The signal full scale at the pixel output is 1.8 V at 3.3-V supply and the noise level is measured to be 1.8 mVrms, and the resulting signal dynamic range is 60 dB.

Titel:	A high-speed, high-sensitivity digital CMOS image sensor with a global shutter and 12-bit column-parallel cyclic A/D converters
Autor/in / Beteiligte Person:	FURUTA, Masanori ; NISHIKAWA, Yukinari ; INOUE, Toru ; KAWAHITO, Shoji
Link:	Volltext View record from PASCAL Archive
Quelle:	2006 Symposium on VLSI circuitsIEEE journal of solid-state circuits 42(4):766-774; Jg. 42 (2007) 4, S. 766-774
Veröffentlichung:	New York, NY: Institute of Electrical and Electronics Engineers, 2007
Medientyp:	Konferenz
Umfang:	print, 12 ref
ISSN:	0018-9200 (print)
Schlagwort:	Electronics Electronique Sciences exactes et technologie Exact sciences and technology Sciences appliquees Applied sciences Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Dispositifs optoélectroniques Optoelectronic devices Dispositifs à images Imaging devices Circuits électriques, optiques et optoélectroniques Electric, optical and optoelectronic circuits Propriétés des circuits Circuit properties Circuits électroniques Electronic circuits Convertisseurs de signal Signal convertors Circuits optiques et optoélectroniques Optical and optoelectronic circuits Optique intégrée. Fibres et guides d'onde optiques Integrated optics. Optical fibers and wave guides Amplificateur optique Optical amplifier Amplificador óptico Capacité électrique Capacitance Capacitancia Capteur image CMOS CMOS image sensors Codage Coding Codificación Commande gain Gain control Commande numérique Digital control Mando numérico Convertisseur AN AD converter Convertidor AN Convertisseur NA DA converter Convertidor NA Dispositif optoélectronique Optoelectronic device Dispositivo optoelectrónico Echantillonnage Sampling Muestreo Echantillonneur bloqueur Sample and hold circuit Muestreador mantenedor Gain Ganancia Haute tension High voltage Alta tensión Image numérique Digital image Imagen numérica Niveau bruit Noise level Nivel ruido Photodiode Fotodiodo Photographie rapide High speed photography Fotografía rápida Réduction bruit Noise reduction Reducción ruido Réseau neuronal flou Fuzzy neural nets CMOS image sensor column-parallel cyclic A/D converter global electronic shutter high-sensitivity high-speed imaging in-pixel charge amplifier Time: 0768
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Conference Paper File Description: text Language: English Author Affiliations: Institute of Electronics and the Graduate School of Electronic Science and Technology, Shizuoka University, Hama matsu-shi, 432-8011, Japan ; Graduate School of Electronic Science and Tech nology, Shizuoka University, Hamamatsu-shi, 432-8011, Japan ; Photoron Limited, Tokyo, 102-0071, Japan ; Research Institute of Electronics, Shizuoka Univer sity, Hamamatsu-shi, 432-8011, Japan Rights: Copyright 2007 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Electronics

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