Einzeltreffer — DigiBib

The trap-related characteristics in depletion mode GaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs) were studied using two different electrical characterization techniques of current collapse and low-frequency noise measurements. With a high-quality MBE-grown gate oxide layer Ga2O3(Gd2O3)∼30 nm thick in situ on GaAs, an extremely small drain current collapse factor ΔImax of less than 5% was observed even with a high drain bias of 16V. In addition, no kink effect was observed in the low-frequency AC I-V characteristics. Moreover, a normalized drain noise current spectral density in the range of 10-11-10-9 Hz-1 (at 10 Hz) was obtained, which is comparable to modern 0.13-μm Si complementary MOS (CMOS) technology under similar biasing conditions. The results indicate low interfacial trap densities for the studied GaAs MOSFETs.

Titel:	Interfacial trap characteristics in depletion mode GaAs MOSFETs
Autor/in / Beteiligte Person:	LEE, T. C ; CHAN, C. Y ; TSAI, P. J ; HSU, Shawn S. H ; KWO, J ; HONG, M
Link:	E-Journal im Bestand der UB Hagen? View record from PASCAL Archive
Quelle:	14th International Conference on Molecular Beam Epitaxy (MBE-XIV), 3-8 September 2006, Tokyo, JapanJournal of crystal growth 301-302:1009-1012; Jg. 301-302 (2007) S. 1009-1012
Veröffentlichung:	Amsterdam: Elsevier, 2007
Medientyp:	Konferenz
Umfang:	print, 10 ref
ISSN:	0022-0248 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Geology Géologie Metallurgy, welding Métallurgie, soudage Sciences exactes et technologie Exact sciences and technology Physique Physics Etat condense: structure electronique, proprietes electriques, magnetiques et optiques Condensed matter: electronic structure, electrical, magnetic, and optical properties Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Etats électroniques de surface et d'interface Surface and interface electron states Domaines interdisciplinaires: science des materiaux; rheologie Cross-disciplinary physics: materials science; rheology Science des matériaux Materials science Matériaux particuliers Specific materials Autres semiconducteurs Other semiconductors Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie Methods of deposition of films and coatings; film growth and epitaxy Epitaxie par faisceaux chimiques, ioniques, atomiques et moléculaires Molecular, atomic, ion, and chemical beam epitaxy Sciences appliquees Applied sciences Electronique Electronics Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Caractéristique courant tension IV characteristic Composé III-V III-V compound Compuesto III-V Couche oxyde Oxide layer Capa óxido Courant drain Drain current Corriente dren Croissance cristalline en phase vapeur Crystal growth from vapors Densité courant Current density Densité spectrale Spectral density Epitaxie jet moléculaire Molecular beam epitaxy Gadolinium oxyde Gadolinium oxides Gallium arséniure Gallium arsenides Gallium oxyde Gallium oxides Oxyde grille Gate oxide Oxido rejilla Propriété électrique Electrical properties Propriété électronique Electronic properties Propiedad electrónica Semiconducteur III-V III-V semiconductors Silicium Silicon Technologie MOS complémentaire Complementary MOS technology Tecnología MOS complementario Transistor MOSFET MOSFET Transistor effet champ Field effect transistors 8105E 8115H 8530T GaAs Gd2O3 Si 71.55.eq; 73.20.at; 73.40.qv; 73.61.ey Al. Characterization; A3. MBE; B2. Dielectric; B2. GaAs; B3. Field effect transistor; B3. MESFET Time: 7320
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Conference Paper File Description: text Language: English Author Affiliations: Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute, Hsinchu, Tawain, Province of China ; Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Tawain, Province of China ; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Tawain, Province of China ; Department of Physics, National Tsing Hua University, Hsinchu, Tawain, Province of China Rights: Copyright 2007 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Electronics ; Physics and materials science ; Physics of condensed state: electronic structure, electrical, magnetic and optical properties

Klicken Sie ein Format an und speichern Sie dann die Daten oder geben Sie eine Empfänger-Adresse ein und lassen Sie sich per Email zusenden.

BibTeX Citavi, JabRef, u.a.
(Literaturverwaltung)

PDF kein Volltext!
(Merkzettel, Notizen)

RIS Endnote, Citavi u.a.
(Literaturverwaltung)

MODS
(XML zur Weiterverarbeitung)

oder

Wählen Sie das für Sie passende Zitationsformat und kopieren Sie es dann in die Zwischenablage, lassen es sich per Mail zusenden oder speichern es als PDF-Datei.

Gewünschter Zitations-Stil:

oder

Bitte prüfen Sie, ob die Zitation formal korrekt ist, bevor Sie sie in einer Arbeit verwenden. Benutzen Sie gegebenenfalls den "Exportieren"-Dialog, wenn Sie ein Literaturverwaltungsprogramm verwenden und die Zitat-Angaben selbst formatieren wollen.

Interfacial trap characteristics in depletion mode GaAs MOSFETs