Metastabilities in the electrical characteristics of CIGS devices: Experimental results vs theoretical predictions
In: Proceedings of Symposium O on thin film chalcogenide photovoltaic materials, EMRS 2006 conference, Nice, France, May 29-June 2, 2006Thin solid films 515(15):6142-6146; Jg. 515 (2007) 15, S. 6142-6146
Konferenz
- print, 19 ref
Zugriff:
Recent theoretical calculations have traced an origin of light- and voltage bias-induced metastabilities in Cu(In,Ga)Se2-based solar cells to negative-U properties of the VSc-VCu complex. In this paper we compare experimental findings with theoretically predicted properties of these defects and calculated values of parameters characteristic for transitions between their different states. Profiles of net acceptor concentrations in the relaxed and metastable states obtained by capacitance profiling have been studied, as well as annealing kinetics of the persistent defect distributions by thermally stimulated capacitance and conductivity. Good qualitative and quantitative agreement are found between theory of VSc-related defects and experimental results. The consequences from the point of view of photovoltaic efficiency of the Cu(In,Ga)Se2-based solar cells are discussed.
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Metastabilities in the electrical characteristics of CIGS devices: Experimental results vs theoretical predictions
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Autor/in / Beteiligte Person: | IGALSON, M ; CWIL, M ; EDOFF, M |
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Quelle: | Proceedings of Symposium O on thin film chalcogenide photovoltaic materials, EMRS 2006 conference, Nice, France, May 29-June 2, 2006Thin solid films 515(15):6142-6146; Jg. 515 (2007) 15, S. 6142-6146 |
Veröffentlichung: | Lausanne: Elsevier Science, 2007 |
Medientyp: | Konferenz |
Umfang: | print, 19 ref |
ISSN: | 0040-6090 (print) |
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