Gaussian quantum dots of type II in in-plane electric field
In: Physica status solidi. A, Applications and materials science (Print) 204(6):1944-1949; Jg. 204 (2007) 6, S. 1944-1949
Konferenz
- print, 15 ref
Zugriff:
The growing interest is recently focusing on QDs of type II, which contrary to type I QDs attract electrons and repulse holes (or conversely). In such QDs an electron-hole pair (Xexciton) can still be traped due to electron-hole Coulomb attraction, resulting in significantly more complex structure of excitonic states. We consider an X exciton in QD of type II defined by electrostatic focusing in a narrow quantum well, in the presence of additional external in-plane electric field. The dependence of PL spectrum on dot size and in-plane electric field is analysed within the Hartree approach for model planar Gaussian confinement. The exciton ground state and its energy red-shift are found as a function of electric field and dot size. Corresponding rearrangement of PL spectrum is described.
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Gaussian quantum dots of type II in in-plane electric field
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Autor/in / Beteiligte Person: | KRASNYJ, J ; TYTUS, M ; DONDEROWICZ, W ; JACAK, W ; CHUCHMALA, A |
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Quelle: | Physica status solidi. A, Applications and materials science (Print) 204(6):1944-1949; Jg. 204 (2007) 6, S. 1944-1949 |
Veröffentlichung: | Berlin: Wiley-VCH, 2007 |
Medientyp: | Konferenz |
Umfang: | print, 15 ref |
ISSN: | 1862-6300 (print) |
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