SrHfO3 as gate dielectric for future CMOS technology
In: INFOS 2007: Proceedings of the 15th Biennial Conference on Insulating Films on Semiconductors, June 20-23, 2007, Glyfada Athens, GreeceMicroelectronic engineering 84(9-10):1869-1873
Konferenz
- print, 13 ref
Zugriff:
Thin epitaxial films of the high-K perovskite SrHfO3 were grown by molecular beam epitaxy on Si(100) and investigated by ellipsometry and X-ray photoelectron spectroscopy to determine its band gap and valence band offset. Conducting AFM shows a good correlation between topography and current mapping, pointing to direct tunneling conduction. Long channels MOSFETs with low equivalent oxide thickness (EOT) were fabricated and their channel mobility measured. Mobility enhancement can be achieved by post processing annealing in various gases but at the cost of interfacial regrowth. An alternative approach is to increase mobility without changing EOT is by electrically stressing the gate dielectric at ∼150 °C.
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SrHfO3 as gate dielectric for future CMOS technology
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| Autor/in / Beteiligte Person: | ROSSEL, C ; SOUSA, M ; GERMANN, R ; TAPPONNIER, A ; BABICH, K ; MARCHIORI, C ; FOMPEYRINE, J ; WEBB, D ; CAIMI, D ; MEREU, B ; ISPAS, A ; LOCQUET, J. P ; SIEGWART, H |
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| Quelle: | INFOS 2007: Proceedings of the 15th Biennial Conference on Insulating Films on Semiconductors, June 20-23, 2007, Glyfada Athens, GreeceMicroelectronic engineering 84(9-10):1869-1873 |
| Veröffentlichung: | Amsterdam: Elsevier Science, 2007 |
| Medientyp: | Konferenz |
| Umfang: | print, 13 ref |
| ISSN: | 0167-9317 (print) |
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