Quasi-SOI MOSFETs- : A promising bulk device candidate for extremely scaled era
In: I.E.E.E. transactions on electron devices, Jg. 54 (2007), Heft 7, S. 1784-1788
Online
academicJournal
- print, 14 ref
Zugriff:
Results from a novel quasi-SOI CMOS architecture fabricated on bulk Si are reported for the first time, demonstrating its viability as an alternative device for the nanometer regime. All of the processing is basically compatible with the conventional CMOS technology. The short-channel effects and the drain-induced barrier-lowering effects can be effectively suppressed by the L-type insulator surrounding the source/drain regions. In addition, quasi-SOI MOSFETs can be more tolerant of process-induced variation for the deep nanometer regime. The *quasi-SOI MOSFET can be considered as one of the promising candidates for highly scaled devices.
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Quasi-SOI MOSFETs- : A promising bulk device candidate for extremely scaled era
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Autor/in / Beteiligte Person: | YU, TIAN ; HAN, XIAO ; RU, HUANG ; CHUGUANG, FENG ; MANSUN, CHAN ; BAOQIN, CHEN ; RUNSHENG, WANG ; XING, ZHANG ; YANGYUAN, WANG |
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Zeitschrift: | I.E.E.E. transactions on electron devices, Jg. 54 (2007), Heft 7, S. 1784-1788 |
Veröffentlichung: | New York, NY: Institute of Electrical and Electronics Engineers, 2007 |
Medientyp: | academicJournal |
Umfang: | print, 14 ref |
ISSN: | 0018-9383 (print) |
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