A 120-dB dynamic range CMOS image sensor with programmable power responsivity
In: ESSCIRC 2006IEEE journal of solid-state circuits 42(7):1555-1563; Jg. 42 (2007) 7, S. 1555-1563
Online
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Zugriff:
A high dynamic range CMOS image sensor providing a user-programmable power responsivity curve is presented. Each pixel integrates, besides a 4T active pixel structure, a voltage comparator and an analog memory to implement a time-to-saturation scheme while also providing the standard integrated photo-current signal. The sensor generates two 10-bit analog outputs allowing a typical dynamic range exceeding 120 dB with a temporal noise lower than 0.13% and a fixed pattern noise of 0.4% (1.7%) of the total signal swing (2 V) at low (high) irradiance without any external calibration procedures. A 140 x 140-pixel array has been fabricated in a 0.35-μm, two-poly four-metal (2P4M), 3.3-V standard CMOS technology. The chip measures 3.9 x 4.6 mm2 with a pixel pitch of 15 μm and a fill factor of 20%.
Titel: |
A 120-dB dynamic range CMOS image sensor with programmable power responsivity
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Autor/in / Beteiligte Person: | STOPPA, David ; VATTERONI, Monica ; COVI, Daniele ; BASCHIROTTO, Andrea ; SARTORI, Alvise ; SIMONI, Andrea |
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Quelle: | ESSCIRC 2006IEEE journal of solid-state circuits 42(7):1555-1563; Jg. 42 (2007) 7, S. 1555-1563 |
Veröffentlichung: | New York, NY: Institute of Electrical and Electronics Engineers, 2007 |
Medientyp: | Konferenz |
Umfang: | print, 23 ref |
ISSN: | 0018-9200 (print) |
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