Compact CPW-MS-CPW Two-Stage pHEMT Amplifier Compatible With Flip Chip Technique in V-Band Frequencies
In: IEEE microwave and wireless components letters, Jg. 18 (2008), Heft 2, S. 112-114
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Zugriff:
The V-band coplanar waveguide (CPW)-microstrip line (MS)-CPW two-stage amplifier with the flip-chip bonding technique is demonstrated using 0.15 μm AlGaAs/InGaAs pseudomorphic high electron mobility transistor technology. The CPW is used at input and output ports for flip-chip assemblies and the MS transmission line is employed in the interstage to reduce chip size. This two-stage amplifier employs transistors as the CPW-MS transition and the MS-CPW transition in the first stage and the second stage, respectively. The CPW-MS-CPW two-stage amplifier has a gain of 14.8 dB, input return loss of 10 dB and output return loss of 22 dB at 53.5 GHz. After the flip-chip bonding, the measured performances have almost the same value.
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Compact CPW-MS-CPW Two-Stage pHEMT Amplifier Compatible With Flip Chip Technique in V-Band Frequencies
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Autor/in / Beteiligte Person: | SU, Jen-Yi ; MENG, Chinchun ; LEE, Yueh-Ting ; HUANG, Guo-Wei |
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Zeitschrift: | IEEE microwave and wireless components letters, Jg. 18 (2008), Heft 2, S. 112-114 |
Veröffentlichung: | New York, NY: Institute of Electrical and Electronics Engineers, 2008 |
Medientyp: | academicJournal |
Umfang: | print, 10 ref |
ISSN: | 1531-1309 (print) |
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