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We have developed 40-Gb/s traveling-wave electroabsorption-modulator-integrated distributed feedback laser (TW-EML) modules using several advanced technologies. First, we have adopted a selective area growth (SAG) method in the fabrication of the 40-Gb/s EML device to provide active layers for the laser and the electroabsorption modulators (EAMs) simultaneously. The fabricated device shows that the measured 3-dB bandwidth of electrical-to-optical (E/O) response reaches about 45 GHz and the return loss (S11) is kept below -10 dB up to 50 GHz. For the module design of the device, we mainly considered electrical and optical factors. The measured S11 of the fabricated 40 Gb/s TW-EML module is below -10 dB up to about 30 GHz and the 3-dB bandwidth of the E/O response reaches over 35 GHz. We also have developed two types of coplanar waveguide (CPW) for the application of the driver amplifier integrated 40 Gb/s TW-EML module, which is a system-on-package (SoP) composed of an EML device and a driver amplifier device in a module. The measured S11 of the two-step-bent CPW is below -10 dB up to 35 GHz and the measured S11 of the parallel type CPW is below -10 dB up to 39 GHz.

Titel:	Fabrication and Characteristics of 40-Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Laser Modules
Autor/in / Beteiligte Person:	YUN, Ho-Gyeong ; CHOI, Kwang-Seong ; KWON, Yong-Hwan ; CHOE, Joong-Seon ; MOON, Jong-Tae
Link:	Volltext View record from PASCAL Archive
Zeitschrift:	IEEE transactions on advanced packaging, Jg. 31 (2008), Heft 2, S. 351-356
Veröffentlichung:	Piscataway, NY: Institute of Electrical and Electronics Engineers, 2008
Medientyp:	academicJournal
Umfang:	print, 21 ref
ISSN:	1521-3323 (print)
Schlagwort:	Electronics Electronique Sciences exactes et technologie Exact sciences and technology Sciences appliquees Applied sciences Appareillage électronique et fabrication. Composants passifs, circuits imprimés, connectique Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Circuits intégrés Integrated circuits Conception. Technologies. Analyse fonctionnement. Essais Design. Technologies. Operation analysis. Testing Circuits électriques, optiques et optoélectroniques Electric, optical and optoelectronic circuits Propriétés des circuits Circuit properties Circuits électroniques Electronic circuits Amplificateurs Amplifiers Circuits optiques et optoélectroniques Optical and optoelectronic circuits Optoélectronique intégrée. Circuits optoélectroniques Integrated optoelectronics. Optoelectronic circuits Amplificateur Amplifier Amplificador Caractéristique optique Optical characteristic Característica óptica Couche active Active layer Capa activa Croissance sélective Selective growth Excitateur Driver Excitador Guide onde coplanaire Coplanar waveguides Laser réaction répartie Distributed feedback laser Laser reacción repartida Ligne transmission Transmission line Línea transmisión Modulateur électroabsorption Electroabsorption modulator Modulador electroabsorción Onde S S wave Onda S Onde progressive Travelling wave Onda progresiva Packaging électronique Electronic packaging Packaging electrónico Perte de retour Return loss Pérdida de retorno Système sur boîtier System on package Sistema sobre estuche Technologie avancée Advanced technology Tecnología avanzada Coplanar waveguide (CPW) electroabsorption modulator-integrated laser packaging transmission line traveling-wave
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Article File Description: text Language: English Author Affiliations: IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350, Korea, Republic of Rights: Copyright 2008 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Electronics

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Fabrication and Characteristics of 40-Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Laser Modules