A Ta/Mo Interdiffusion Dual Metal Gate Technology for Drivability Enhancement of FinFETs
In: IEEE electron device letters, Jg. 29 (2008), Heft 6, S. 618-620
Online
academicJournal
- print, 14 ref
Zugriff:
-A Ta/Mo interdiffusion dual metal gate technology was successfully introduced to FinFET fabrication. The advantage of the proposed technology was examined by using the gate-first process without a metal-etch off step. The Ta/Mo gated nMOS FinFET with a reduced threshold voltage (Vth) and the Mo gated pMOS FinFET exhibited symmetrical values of Vth (0.31/-0.36 V), which are desirable for the FinFET CMOS circuit operation with enhanced current drivability. It was also confirmed that the Ta/Mo interdiffusion process causes no degradation in the carrier mobility.
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A Ta/Mo Interdiffusion Dual Metal Gate Technology for Drivability Enhancement of FinFETs
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Autor/in / Beteiligte Person: | MATSUKAWA, Takashi ; ENDO, Kazuhiko ; SUZUKI, Eiichi ; YONGXUN, LIU ; O'UCHI, Shinichi ; ISHIKAWA, Yuki ; YAMAUCHI, Hiromi ; TSUKADA, Junichi ; ISHII, Kenichi ; MASAHARA, Meishoku ; SAKAMOTO, Kunihiro |
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Zeitschrift: | IEEE electron device letters, Jg. 29 (2008), Heft 6, S. 618-620 |
Veröffentlichung: | New York, NY: Institute of Electrical and Electronics Engineers, 2008 |
Medientyp: | academicJournal |
Umfang: | print, 14 ref |
ISSN: | 0741-3106 (print) |
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