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Thin films of ZrO2 and HfO2 have been deposited by liquid injection metalorganic chemical vapour deposition (MOCVD) and atomic layer deposition (ALD) using a range of ansa-metallocene precursors [(Cp2CMe2)ZrMe2] (1), [(Cp2CMe2)ZrMe(OMe)] (2) [(Cp2CMe2)HfMe2j (3), and [(Cp2CMe2)HfMe(OMe)] (4) with O2 (MOCVD) or ozone (ALD) as oxygen source. The crystal structures of the new complexes 2 and 3 have been determined and they are shown to be mononuclear and isostructural to complex 1, containing a chelating [Cp2CMe2] ligand leading to a pseudo-four-coordinate distorted tetrahedral geometry around the central Zr or Hf atom, in agreement with structures from Density Functional Theory (DFT). The ZrO2 and HfO2 films were deposited by MOCVD over the temperature range 400-650 °C and by ALD over the temperature range 175-350 °C. X-Ray diffraction analysis showed that the HfO2 films deposited by MOCVD were amorphous, whereas the ZrO2 films deposited by MOCVD were in the tetragonal phase. Auger electron spectroscopy showed that residual carbon was present in all the films and that the films grown by MOCVD contained more carbon (2.4-17.0 at.%) than the films grown by ALD (1.8-2.8 at.%). The dielectric properties of ZrO2 and HfO2 films deposited by ALD were evaluated using [Al/MO2/n-Si] metal oxide semiconductor capacitor (MOSC) structures which showed that the films had low current leakage densities of less than 6 x 10-7 A cm-2 at ±2 MV cm-1.

Titel:	Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors
Autor/in / Beteiligte Person:	BLACK, Kate ; ASPINALL, Helen C ; HEYS, Peter N ; JONES, Anthony C ; PRZYBYLAK, Katarzyna ; BACSA, John ; CHALKER, Paul R ; TAYLOR, Stephen ; CE ZHOU, ZHAO ; ELLIOTT, Simon D ; ZYDOR, Aleksandra
Link:	Full Text Finder (Volltext) View record from PASCAL Archive
Zeitschrift:	Journal of material chemistry, Jg. 18 (2008), Heft 38, S. 4561-4571
Veröffentlichung:	Cambridge: Royal Society of Chemistry, 2008
Medientyp:	academicJournal
Umfang:	print, 73 ref
ISSN:	0959-9428 (print)
Schlagwort:	Chemistry Chimie Sciences exactes et technologie Exact sciences and technology Physique Physics Domaines interdisciplinaires: science des materiaux; rheologie Cross-disciplinary physics: materials science; rheology Science des matériaux Materials science Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie Methods of deposition of films and coatings; film growth and epitaxy Dépôt chimique en phase vapeur (incluant le cvd activé par plasma, mocvd, etc.) Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Epitaxie en phase vapeur; croissance en phase vapeur Vapor phase epitaxy; growth from vapor phase Analyse diffraction RX X-ray diffraction analysis Carbone Carbon Chélateur Chelating agents Condensateur MOS MOS capacitors Couche mince amorphe Amorphous thin film Capa fina amorfa Couche mince Thin films Courant fuite Leakage currents Densité courant Current density Dépendance température Temperature dependence Etude théorique Theoretical study Film liquide Liquid films Hafnium Métallocène Metallocene Metaloceno Méthode ALE Atomic layer epitaxial growth Méthode MOCVD MOCVD Méthode couche atomique Atomic layer method Método capa atómica Méthode fonctionnelle densité Density functional method Oxyde d'hafnium Hafnium oxide Hafnio óxido Oxyde de zirconium Zirconium oxide Zirconio óxido Propriété diélectrique Dielectric properties Précurseur Precursor Réseau quadratique Tetragonal lattices Silicium Silicon Spectrométrie Auger AES Structure cristalline Crystal structure Zirconium 8115G 8115K Hf HfO2 Si Zr ZrO2
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Article File Description: text Language: English Author Affiliations: Department of Materials Science and Engineering, University of Liverpool, Liverpool, L69 3BX, United Kingdom ; Department of Chemistry, University of Liverpool, Liverpool, L69 7ZD, United Kingdom ; SAFC Hitech, Power Road, Bromborough, Wirral, CH62 3QF, United Kingdom ; Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ, United Kingdom ; Tyndall National Institute, Lee Maltings, Cork, Ireland Rights: Copyright 2009 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Physics and materials science

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Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors