Temperature dependence of oriented growth of Pb[Yb1/2Nb1/2]O3-PbTiO3 thin films deposited on LNO/Si substrates
In: Thin solid films, Jg. 517 (2008), Heft 2, S. 695-698
academicJournal
- print, 20 ref
Zugriff:
(1 -x)Pb[Yb1/2Nb1/2]O3-xPbTiO3 (PYbN-PT,x=0.5) (001) oriented thin films were deposited onto LaNiO3 (LNO)/Si (001) substrates by sol-gel processing. The crystallographic texture of the films was controlled by the annealing temperature and heating rate. Highly (001) oriented LNO thin films were prepared by a simple metal organic decomposition technique, and the samples were annealed at 700 °C and 750 °C using a rapid thermal annealing process and furnace, respectively. X-ray diffraction analysis revealed that the films of PYbN-PT were highly (001) oriented along LNO/Si substrates. The degree of PYbN-PT orientation is dependent on the heating rate and annealing temperature. Annealing heating rate of 10 °C/s and high annealing temperature near 750 °C produce the greatest degree of (001) orientation, which gives rise to improved dielectric properties.
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Temperature dependence of oriented growth of Pb[Yb1/2Nb1/2]O3-PbTiO3 thin films deposited on LNO/Si substrates
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Autor/in / Beteiligte Person: | ZHOU, Q. F ; SHUNG, K. K ; ZHANG, Q. Q ; DJUTH, F. T |
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Zeitschrift: | Thin solid films, Jg. 517 (2008), Heft 2, S. 695-698 |
Veröffentlichung: | Amsterdam: Elsevier, 2008 |
Medientyp: | academicJournal |
Umfang: | print, 20 ref |
ISSN: | 0040-6090 (print) |
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