Epitaxial growth of boron nitride on a Rh(111) multilayer system : Formation and fine tuning of a BN-nanomesh
In: Surface science, Jg. 603 (2009), Heft 3, S. 425-432
academicJournal
- print, 38 ref
Zugriff:
The epitaxial growth of boron nitride on the surface of a Rh-YSZ-Si(111) multilayer system by CVD of borazine (HNBH)3 was investigated by low energy electron diffraction (LEED). The formation of a (14 x 14)h-BNon(13 x 13)Rh-YSZ-Si(111) superstructure was observed, which is different in size from an already reported (13 x 13) h-BN on (12 x 12)Rh(111) superstructure grown on a Rh( 111) single crystal substrate (h-BN-nanomesh). We found hints that differences between the thermal expansion behaviour of the multilayer substrates and the single crystal substrate can be the reason for the formation of different sized superstructures.
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Epitaxial growth of boron nitride on a Rh(111) multilayer system : Formation and fine tuning of a BN-nanomesh
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Autor/in / Beteiligte Person: | MÜLLER, Frank ; HÜFNER, Stefan ; SACHDEV, Hermann |
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Zeitschrift: | Surface science, Jg. 603 (2009), Heft 3, S. 425-432 |
Veröffentlichung: | Kidlington: Elsevier, 2009 |
Medientyp: | academicJournal |
Umfang: | print, 38 ref |
ISSN: | 0039-6028 (print) |
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