The most essential factor for high-speed, low-power 0.35 μm complementary metal-oxide-semiconductor circuits fabricated on separation-by-implanted-oxygen (SIMOX) substrates
In: Japanese journal of applied physics, Jg. 36 (1997), Heft 11, S. 6699-6705
academicJournal
- print, 34 ref 1
Zugriff:
We present experimental data concerning the propagation delay time and the power consumption of 0.35 μm complementary metal-oxide-semiconductor (CMOS) gates (inverter, NAND, NOR) fabricated on the commercial standard high dose separation-by-implanted-oxygen (SIMOX) substrates. Each CMOS gate was composed of the fully depleted (FD) mode N- and P-type metal-oxide-semiconductor (NMOS and PMOS) transistors or the partially depleted (PD) mode ones with no body-contact. On the basis of the experimental data, together with SPICE simulation results, we show that the FD-mode is not the primary factor for high-speed, low-power performances of the CMOS/SIMOX circuits, but the reduced drain parasitic capacitance (both the bottom and the peripheral components) with the thin film silicon-on-insulator (SOI) structure is. Furthermore, we show the significance of the design and control of the transistor threshold voltage and/or the off-state leakage current for high-speed, low-power CMOS/SIMOX circuits.
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The most essential factor for high-speed, low-power 0.35 μm complementary metal-oxide-semiconductor circuits fabricated on separation-by-implanted-oxygen (SIMOX) substrates
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Autor/in / Beteiligte Person: | YOSHINO, A ; KUMAGAI, K ; HAMATAKE, N ; KUROSAWA, S ; OKUMURA, K |
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Zeitschrift: | Japanese journal of applied physics, Jg. 36 (1997), Heft 11, S. 6699-6705 |
Veröffentlichung: | Tokyo: Japanese journal of applied physics, 1997 |
Medientyp: | academicJournal |
Umfang: | print, 34 ref 1 |
ISSN: | 0021-4922 (print) |
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