0.5 V ultra-low power wideband LNA with forward body bias technique
In: Electronics letters, Jg. 45 (2009), Heft 6, S. 289-290
academicJournal
- print, 8 ref
Zugriff:
An ultra-low power wideband CMOS low noise amplifier (LNA) fabricated in TSMC 0.18 μm RF CMOS process for sub 1 GHz applications is presented. The capacitive cross-coupled LNA with forward-body-bias (FBB) technique is adopted to achieve wideband input impedance matching and low power, low noise factor. The LNA is tested in the frequency range of 400-900 MHz, and exhibits a voltage gain of 18.5-20.7dB, and a noise figure of 2.95 dB, drawing only 0.385 mW from 0.5 V power supply.
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0.5 V ultra-low power wideband LNA with forward body bias technique
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Autor/in / Beteiligte Person: | LIU, J ; LIAO, H ; HUANG, R |
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Zeitschrift: | Electronics letters, Jg. 45 (2009), Heft 6, S. 289-290 |
Veröffentlichung: | Stevenage: Institution of Engineering and Technology, 2009 |
Medientyp: | academicJournal |
Umfang: | print, 8 ref |
ISSN: | 0013-5194 (print) |
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