Preparation and properties of CuInxGa1―xSe2 thin-film solar cell absorbers from selenization of Ga-rich electrodeposited precursors
In: Semiconductor science and technology, Jg. 24 (2009), Heft 7
Online
academicJournal
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Zugriff:
This paper presents our studies on the preparation and properties of CuInxGa1―xSe2 (CIGS) thin-film solar cell absorbers grown from Ga-rich electrodeposited precursors followed by their selenization. X-ray fluorescence and scanning electron microscopy results show that the deposition potential of ―0.7 V is suitable for obtaining a smooth CIGS precursor film with inclusion of more gallium (x = 0.4). X-ray diffraction studies reveal that a stoichiometric CuIn0.7Ga0.3Se2 phase that can be formed by selenization of the Ga-rich precursor is ascribed to a high Se vapor pressure. An optical study shows that the band-gap energy of the stoichiometric CIGS sample is 1.17 eV. The best photovoltaic devices showed a conversion efficiency of 2.0 ± 0.5%.
Titel: |
Preparation and properties of CuInxGa1―xSe2 thin-film solar cell absorbers from selenization of Ga-rich electrodeposited precursors
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Autor/in / Beteiligte Person: | KANG, F ; AO, J. P ; SUN, G. Z ; HE, Q ; SUN, Y |
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Zeitschrift: | Semiconductor science and technology, Jg. 24 (2009), Heft 7 |
Veröffentlichung: | Bristol: Institute of Physics, 2009 |
Medientyp: | academicJournal |
Umfang: | print, 19 ref |
ISSN: | 0268-1242 (print) |
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