Effects of initial stages on the crystal quality of nonpolar α-plane AIN on r-plane sapphire by low-pressure HVPE
In: Journal of crystal growth, Jg. 311 (2009), Heft 14, S. 3801-3805
academicJournal
- print, 30 ref
Zugriff:
A 4-6 μm thick a-plane (112 0) AIN was grown on r-plane sapphire substrate by low-pressure hydride vapor phase epitaxy (LP-HVPE), using a direct growth without any nitridation and buffer layer, a single-step nitridation growth, a two-step nitridation growth and a two-step buffer growth method. For the two-step buffer growth procedure, smoother surface is observed with the lower full widths at half maximum (FWHM) of X-ray rocking curves (XRC) compared with the other two kinds of nitridation procedures. A smaller FWHM of in-plane XRC peak anisotropy features are reversed, which is consistent with the smaller in-plane stress anisotropic distribution in α-plane AlN, when the two-step nitridation or buffer growth method is used. In four kinds of initial growth procedures, the two-step buffer method is the suitable method for the growth of a-plane AIN by HVPE with the high crystal quality and more isotropic distribution.
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Effects of initial stages on the crystal quality of nonpolar α-plane AIN on r-plane sapphire by low-pressure HVPE
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Autor/in / Beteiligte Person: | WU, Jie-Jun ; KATAGIRI, Yusuke ; OKUURA, Kazuki ; LI, Da-Bing ; MIYAKE, Hideto ; HIRAMATSU, Kazumasa |
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Zeitschrift: | Journal of crystal growth, Jg. 311 (2009), Heft 14, S. 3801-3805 |
Veröffentlichung: | Amsterdam: Elsevier, 2009 |
Medientyp: | academicJournal |
Umfang: | print, 30 ref |
ISSN: | 0022-0248 (print) |
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