A CMOS circuit for evaluating the NBTI over a wide frequency range
In: Microelectronics and reliability, Jg. 49 (2009), Heft 8, S. 885-891
academicJournal
- print, 11 ref
Zugriff:
In this paper an application specific integrated circuit (ASIC) for evaluating the NBTI effects over a wide frequency is described. The circuit is designed to allow measurements in multiple modes, specifically, DC and AC NBTI, on single pFET and on an inverter. The results indicate that AC NBTI is independent of the frequency in the 1 Hz-2 GHz range. Furthermore, the voltage and the stress time acceleration are identical for both AC and DC NBTI stress.
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A CMOS circuit for evaluating the NBTI over a wide frequency range
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Autor/in / Beteiligte Person: | FERNANDEZ-GARCIA, R ; KACZER, B ; GROESENEKEN, G |
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Zeitschrift: | Microelectronics and reliability, Jg. 49 (2009), Heft 8, S. 885-891 |
Veröffentlichung: | Kidlington: Elsevier, 2009 |
Medientyp: | academicJournal |
Umfang: | print, 11 ref |
ISSN: | 0026-2714 (print) |
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