Structure and electrical properties of c-axis epitaxial Srm-3Bi4TimO3m+3 (m = 5 and 6) thin films
In: Solid state communications, Jg. 149 (2009), Heft 45-46, S. 2061-2064
academicJournal
- print, 21 ref
Zugriff:
C-axis epitaxial Srm-3Bi4TimO3m+3 (SBTim, m = 5 and 6) thin films were fabricated on conductive LaNiO3 (LNO) coated LaAlO3 (LAO) substrates by pulsed laser deposition. The structure was characterized by x-ray diffraction (including θ - 2θ, rocking curve, and φ scans) and atomic force microscopy. The epitaxial relationship was established (001)SBTim//(001)LNO//(001)LAO, [100]SBTim//[110]LNO//[110]LAO when orthorhombic structure indexing was used for SBTim. It is revealed that the films with odd m have a ferroelectric hysteresis loops whereas those with even m have collinear polarization-electric field curves. The microstructure background responsible for the observations was discussed. Our results provide further evidence that the c-axis polarization of Bi-layered oxides depends on the parity of m.
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Structure and electrical properties of c-axis epitaxial Srm-3Bi4TimO3m+3 (m = 5 and 6) thin films
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Autor/in / Beteiligte Person: | LEI, WANG ; DING, Lu-Yi ; ZHANG, Shan-Tao ; CHEN, Yan-Feng ; LIU, Zhi-Guo |
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Zeitschrift: | Solid state communications, Jg. 149 (2009), Heft 45-46, S. 2061-2064 |
Veröffentlichung: | Kidlington: Elsevier, 2009 |
Medientyp: | academicJournal |
Umfang: | print, 21 ref |
ISSN: | 0038-1098 (print) |
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