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A configurable integration technology suitable for implementing application specific radio-frequency (RF) and microwave circuits is presented. This postfabrication integration scheme is compatible with complementary metal-oxide-semiconductor (CMOS) technology and utilizes room temperature deposited Parylene-N as low loss and low permittivity dielectric material. Interconnect lines, inductors, and transmission lines fabricated on top of arrays of prefabricated 0.13 μm and 90 nm CMOS transistors coated with Parylene-N are configured to design interconnect programmable RF and microwave circuits. The technology is used to demonstrate three proof of concept interconnect programmable narrowband amplifiers. These amplifiers have center frequencies of 5.5, 6.4, and 18 GHz with forward gain S21 of 16.6, 11, and 18.7 dB, respectively. Fabrication simplicity and programmable nature of this technology compared to standard application specific integrated circuit (ASIC) fabrication lowers the cost and time to market of individual ASIC chip.

Titel:	An Integration Technology for RF and Microwave Circuits Based on Interconnect Programming
Autor/in / Beteiligte Person:	RABIEIRAD, Laleh ; MARTINEZ, Edgar J ; MOHAMMADI, Saeed
Link:	Volltext View record from PASCAL Archive
Zeitschrift:	IEEE transactions on advanced packaging, Jg. 33 (2010), Heft 2, S. 362-369
Veröffentlichung:	Piscataway, NJ: Institute of Electrical and Electronics Engineers, 2010
Medientyp:	academicJournal
Umfang:	print, 33 ref
ISSN:	1521-3323 (print)
Schlagwort:	Electronics Electronique Sciences exactes et technologie Exact sciences and technology Sciences appliquees Applied sciences Appareillage électronique et fabrication. Composants passifs, circuits imprimés, connectique Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Circuits intégrés Integrated circuits Conception. Technologies. Analyse fonctionnement. Essais Design. Technologies. Operation analysis. Testing Dispositifs magnétiques Magnetic devices Circuits électriques, optiques et optoélectroniques Electric, optical and optoelectronic circuits Propriétés des circuits Circuit properties Circuits hyperfréquences, circuits intégrés hyperfréquences, lignes de transmission hyperfréquences, circuits à ondes submillimétriques Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Amplificateur Amplifier Amplificador Bande étroite Narrow band Banda estrecha Bobine inductance Inductor Bobina inductancia Circuit hyperfréquence Microwave circuit Circuito hiperfrecuencia Circuit intégré Integrated circuit Circuito integrado Circuit programmable Programmable circuit Circuito programable Circuit à la demande Custom circuit Circuito integrato personalizado Diélectrique basse permittivité Low k dielectric Dieléctrico baja constante dieléctrica Gain Ganancia Guide onde coplanaire Coplanar waveguides Interconnexion Interconnection Interconexión Ligne contact Contact line Línea contacto Ligne transmission Transmission line Línea transmisión Matériau revêtu Coated material Material revestido Radiofréquence Radiofrequency Radiofrecuencia Technologie MOS complémentaire Complementary MOS technology Tecnología MOS complementario Température ambiante Room temperature Temperatura ambiente Transistor MOS complémentaire Complementary MOS transistor Transistor MOS complementario Coplanar waveguide (CPW) transmission line Parylene-N inductor interconnect low-k dielectric material narrowband amplifiers programmable circuits radio frequency (RF)
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Article File Description: text Language: English Author Affiliations: School of Electrical and Computer Engineering and with the Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, United States ; College of Engineering, University of Illinois, Urbana-Champaign, IL 61820, United States Rights: Copyright 2015 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Electronics

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An Integration Technology for RF and Microwave Circuits Based on Interconnect Programming