A 60 GHz Phase Shifter Integrated With LNA and PA in 65 nm CMOS for Phased Array Systems
In: IEEE journal of solid-state circuits, Jg. 45 (2010), Heft 9, S. 1697-1709
Online
academicJournal
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Zugriff:
This paper presents the design of a 60 GHz phase shifter integrated with a low-noise amplifier (LNA) and power amplifier (PA) in a 65 nm CMOS technology for phased array systems. The 4-bit digitally controlled RF phase shifter is based on programmable weighted combinations of I/Q paths using digitally controlled variable gain amplifiers (VGAs). With the combination of an LNA, a phase shifter and part of a combiner, each receiver path achieves 7.2 dB noise figure, a 360° phase shift range in steps of approximately 22.5°, an average insertion gain of 12 dB at 61 GHz, a 3 dB-bandwidth of 5.5 GHz and dissipates 78 mW. Consisting of a phase shifter and a PA, one transmitter path achieves a maximum output power of higher than +8.3 dBm, a 360° phase shift range in 22.5° steps, an average insertion gain of 7.7 dB at 62 GHz, a 3 dB-bandwidth of 6.5 GHz and dissipates 168 mW.
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A 60 GHz Phase Shifter Integrated With LNA and PA in 65 nm CMOS for Phased Array Systems
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Autor/in / Beteiligte Person: | YIKUN, YU ; BALTUS, Peter G. M ; DE GRAAUW, Anton ; VAN DER HEIJDEN, Edwin ; VAUCHER, Cicero S ; VAN ROERMUND, Arthur H. M |
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Zeitschrift: | IEEE journal of solid-state circuits, Jg. 45 (2010), Heft 9, S. 1697-1709 |
Veröffentlichung: | New York, NY: Institute of Electrical and Electronics Engineers, 2010 |
Medientyp: | academicJournal |
Umfang: | print, 42 ref |
ISSN: | 0018-9200 (print) |
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