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Epitaxial, graphitic carbon thin films were directly grown on C-face/(0 0 0 1) SiC and (0 0 0 1) sapphire by chemical vapor deposition (CVD), using propane as a carbon source and without any catalytic metal on the substrate surface. Raman spectroscopy shows the signature of multilayer graphene/graphite growth on both the SiC and sapphire. Raman 2D-peaks have Lorentzian lineshapes with FWHM of ~60 cm-1 and the ratio of the D-peak to G-peak intensity (ID/IG) linearly decreases (down to 0.06) as growth temperature is increased. The epitaxial relationship between film and substrates were determined by X-ray diffraction. On both substrates, graphitic layers are oriented parallel to the substrate, but exhibit significant rotational disorder about the surface normal, and predominantly rhombohedral stacking. Film thicknesses were determined to be a function of growth time, growth temperature, and propane flow rate.

Titel:	Epitaxial growth of graphitic carbon on C-face SiC and sapphire by chemical vapor deposition (CVD)
Autor/in / Beteiligte Person:	HWANG, Jeonghyun ; SHIELDS, Virgil B ; THOMAS, Christopher I ; SHIVARAMAN, Shriram ; DONG, HAO ; KIM, Moonkyung ; WOLL, Arthur R ; TOMPA, Gary S ; SPENCER, Michael G
Link:	E-Journal im Bestand der UB Hagen? View record from PASCAL Archive
Zeitschrift:	Journal of crystal growth, Jg. 312 (2010), Heft 21, S. 3219-3224
Veröffentlichung:	Amsterdam: Elsevier, 2010
Medientyp:	academicJournal
Umfang:	print, 30 ref
ISSN:	0022-0248 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Geology Géologie Metallurgy, welding Métallurgie, soudage Sciences exactes et technologie Exact sciences and technology Physique Physics Etat condense: structure, proprietes mecaniques et thermiques Condensed matter: structure, mechanical and thermal properties Structure des liquides et des solides; cristallographie Structure of solids and liquids; crystallography Structure de solides cristallins particuliers Structure of specific crystalline solids Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques) Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Structure et morphologie de couches minces Thin film structure and morphology Structure et morphologie; épaisseur Structure and morphology; thickness Domaines interdisciplinaires: science des materiaux; rheologie Cross-disciplinary physics: materials science; rheology Science des matériaux Materials science Méthodes de croissance cristalline; physique de la croissance cristalline Methods of crystal growth; physics of crystal growth Théorie et modèles de la croissance cristalline; physique de la croissance cristalline, morphologie cristalline et orientation cristalline Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie Methods of deposition of films and coatings; film growth and epitaxy Dépôt chimique en phase vapeur (incluant le cvd activé par plasma, mocvd, etc.) Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Carbone Carbon Carbure de silicium Silicon carbide Silicio carburo Couche mince Thin films Couche multimoléculaire Multilayer Capa multimolecular Couche épitaxique Epitaxial layers Diffraction RX XRD Dépendance temps Time dependence Dépôt chimique phase vapeur CVD Epaisseur couche Layer thickness Espesor capa Epitaxie Epitaxy Graphite Graphène Graphene Mode empilement Stacking sequence Modo apilamiento Multicouche Multilayers Mécanisme croissance Growth mechanism Mecanismo crecimiento Profil raie Line shape Réseau rhomboédrique Trigonal lattices Saphir Sapphire Spectre Raman Raman spectra Spectrométrie Raman Raman spectroscopy Structure cristalline Crystal structure 6855J 8110A 8115G SiC Substrat métal A1. X-ray diffraction A3. Chemical vapor deposition processes B1. Graphene B1. Graphite Time: 6166
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Article File Description: text Language: English Author Affiliations: School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, United States ; Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY 14853, United States ; Structured Materials Industries (SMI), Inc., 201 Circle Drive N., Piscataway, NJ 08854, United States Rights: Copyright 2015 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Physics and materials science ; Physics of condensed state: structure, mechanical and thermal properties

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Epitaxial growth of graphitic carbon on C-face SiC and sapphire by chemical vapor deposition (CVD)