Graphene for CMOS and Beyond CMOS Applications
In: NANOELECTRONICS RESEARCH FOR BEYOND CMOS INFORMATION PROCESSING, Jg. 98 (2010), Heft 12, S. 2032-2046
Online
academicJournal
- print, 80 ref
Zugriff:
Owing in part to complementary metal-oxide-semiconductor (CMOS) scaling issues, the semiconductor industry is placing an increased emphasis on emerging materials and devices that may provide a solution beyond the 22-nm node. Single and few layers of carbon sheets (graphene) have been fabricated by a variety of techniques including mechanical exfoliation and chemical vapor deposition, and field-effect devices have been demonstrated with room temperature field-effect mobilities close to 10 000 cm2/Vs. But since graphene is a gapless semiconductor, these transistors have high OFF-state leakage and nonsaturating drive currents. This is problematic for digital logic, but is acceptable for analog device applications such as low-noise amplifiers and radio-frequency (RF)/millimeter-wave field-effect transistors (FETs). The remarkable transport physics of graphene due to its linear bandstructure have led to novel beyond CMOS logic devices as well, such as pseudospin devices.
Titel: |
Graphene for CMOS and Beyond CMOS Applications
|
---|---|
Autor/in / Beteiligte Person: | BANERJEE, Sanjay K ; FRANKLIN, Leonard ; TUTUC, Emanuel ; BASU, Dipanjan ; KIM, Seyoung ; REDDY, Dharmendar ; MACDONALD, Allan H |
Link: | |
Zeitschrift: | NANOELECTRONICS RESEARCH FOR BEYOND CMOS INFORMATION PROCESSING, Jg. 98 (2010), Heft 12, S. 2032-2046 |
Veröffentlichung: | New York, NY: Institute of Electrical and Electronics Engineers, 2010 |
Medientyp: | academicJournal |
Umfang: | print, 80 ref |
ISSN: | 0018-9219 (print) |
Schlagwort: |
|
Sonstiges: |
|