Cu(In,Ga)Se2 Thin Film Preparation from a Cu(In,Ga) Metallic Alloy and Se Nanoparticles by an Intense Pulsed Light Technique
In: Journal of electronic materials, Jg. 40 (2011), Heft 2, S. 122-126
Online
academicJournal
- print, 13 ref
Zugriff:
The main contribution of this paper is the development of a novel process for the formation of copper indium gallium diselenide (CIGS) films. CIGS films with a thickness of 4 μm and grain size from 0.3 μm to 1 μm were prepared from a Cu(In0.7Ga0.3) (CIG) metallic alloy and Se nanoparticles by the intense pulsed light (IPL) technique. The melting of the CIG and Se nanoparticles and nucleation of CIGS occurred in a very short reaction time of 2 ms. It is believed that the Se diffuses into the CIG lattice to form the CIGS chalcopyrite crystal structure. The tetragonal chalcopyrite crystal structure was confirmed by x-ray powder diffraction (XRD), while the microstructure and composition were determined by field-emission scanning electron microscopy (FESEM), energy-dispersive x-ray spectroscopy (EDAX), and x-ray fluorescence (XRF) spectroscopy.
Titel: |
Cu(In,Ga)Se2 Thin Film Preparation from a Cu(In,Ga) Metallic Alloy and Se Nanoparticles by an Intense Pulsed Light Technique
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Autor/in / Beteiligte Person: | DHAGE, Sanjay R ; KIM, Hak-Sung ; HAHN, H. Thomas |
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Zeitschrift: | Journal of electronic materials, Jg. 40 (2011), Heft 2, S. 122-126 |
Veröffentlichung: | Heidelberg: Springer, 2011 |
Medientyp: | academicJournal |
Umfang: | print, 13 ref |
ISSN: | 0361-5235 (print) |
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