Design and implementation of a 1-V transformer magnetic feedback low-noise amplifier (LNA) at 5-6 GHz, in a 90 nm complementary metal-oxide-semiconductor (CMOS) process
In: International journal of electronics, Jg. 98 (2011), Heft 1-3, S. 235-248
academicJournal
- print, 3/4 p
Zugriff:
In this study, a low-noise amplifier (LNA) suitable for low-voltage operation is presented. The LNA operates at a frequency range between 5 and 6 GHz. Its topology exploits magnetic feedback to achieve high reverse isolation and low noise performance without a significant degradation of the gain and linearity of the circuit. The design has been fabricated, considering full electrostatic discharge protection, in a modern 90 nm complementary metal-oxide-semiconductor process. The measured performance, at 5.4 GHz, shows a reverse isolation of —17.3 dB, a gain of 10.4 dB, a noise figure of 0.98 dB and an input intercept point of 1.4 dBm. The circuit dissipates 12.5 mW from a 1 V supply, while it occupies 0.162 mm2 of the die area.
Titel: |
Design and implementation of a 1-V transformer magnetic feedback low-noise amplifier (LNA) at 5-6 GHz, in a 90 nm complementary metal-oxide-semiconductor (CMOS) process
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Autor/in / Beteiligte Person: | KYTONAKI, Eleni-Sotiria ; SIMITSAKIS, Paschalis ; BAZIGOS, Antonios ; PAPANANOS, Yannis |
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Zeitschrift: | International journal of electronics, Jg. 98 (2011), Heft 1-3, S. 235-248 |
Veröffentlichung: | Abingdon: Taylor & Francis, 2011 |
Medientyp: | academicJournal |
Umfang: | print, 3/4 p |
ISSN: | 0020-7217 (print) |
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