A low-voltage, low power divide-by-4 LC-tank injection-locked frequency divider
In: International journal of electronics, Jg. 98 (2011), Heft 4-6, S. 521-527
academicJournal
- print, 1/2 p
Zugriff:
A low-voltage wide locking range injection-locked frequency divider (ILFD) using a standard 0.18 μm complementary metal-oxide-semiconductor process is presented. The ILFD is based on a differential LC VCO with one injection metal oxide semiconductor field effect transistor (MOSFET) for coupling external signals to the resonator. The low-voltage operation and wide locking range is obtained by boosting the gate voltage swing of the ILFD. Measurements show that at the supply voltage of 0.67 V, the divider's free-running frequency is tunable from 3.91 to 4.22 GHz, and the core power consumption is 1.87 mW. At the incident power of 0dBm the divide-by-4 operation range is about 2GHz (12.3%), from the incident frequency 15.3-17.3GHz. The divide-by-2 locking range is about 5.1 GHz (77%), from the incident frequency 4.1-9.2 GHz.
Titel: |
A low-voltage, low power divide-by-4 LC-tank injection-locked frequency divider
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Autor/in / Beteiligte Person: | JANG, Sheng-Lyang ; LIU, Cheng-Hsin ; CHANG, Chia-Wei ; JUANG, Miin-Horng |
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Zeitschrift: | International journal of electronics, Jg. 98 (2011), Heft 4-6, S. 521-527 |
Veröffentlichung: | Abingdon: Taylor & Francis, 2011 |
Medientyp: | academicJournal |
Umfang: | print, 1/2 p |
ISSN: | 0020-7217 (print) |
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