Thermal stability of metallized CVD diamond
In: Thin solid films, Jg. 286 (1996), Heft 1-2, S. 264-269
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Zugriff:
Copyright (c) 1996 Elsevier Science B.V. All rights reserved. Four metallization systems, WTi/Au, Ti/Pt/Au, Mo/Au and Nb/Au, have been examined for thermal reliability, solderability, wire bonding and adhesion on chemically vapor deposited diamond (CVDD). Thermal stability up to 600 °C was determined by conductivity measurements and X-ray photoelectron spectroscopy depth profiles. WTi/Au was found to be the most thermally stable, exhibiting constant resistivity and little interdiffusion after 4 h at 500 °C. Nb/Au was stable to approximately 450 °C, where marked diffusion of Nb into the gold caused a rapid rise in resistivity and loss of adhesion. Ti/Pt/Au exhibited slow diffusion of Pt into the Au and a modest rise in resistivity as low as 350 °C. Only Mo/Au showed significant interdiffusion between the Mo bond coat and CVDD at such low temperatures. This interdiffusion was markedly enhanced by the presence of oxygen. Each of the four metallization systems initially demonstrated excellent adhesion to CVDD, although all eventually lost adhesion due to conversion of the transition metal carbide bond layer to an oxide.
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Thermal stability of metallized CVD diamond
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Autor/in / Beteiligte Person: | IACOVANGELO, C. D |
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Zeitschrift: | Thin solid films, Jg. 286 (1996), Heft 1-2, S. 264-269 |
Veröffentlichung: | Lausanne: Elsevier Science, 1996 |
Medientyp: | academicJournal |
Umfang: | print, |
ISSN: | 0040-6090 (print) |
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